Two-dimensional nanomaterials such as MoS 2 are of great interest both because of their novel physical properties and their applications potential. Liquid exfoliation, an important production method, is limited by our inability to quickly and easily measure nanosheet size, thickness or concentration. Here we demonstrate a method to simultaneously determine mean values of these properties from an optical extinction spectrum measured on a liquid dispersion of MoS 2 nanosheets. The concentration measurement is based on the size-independence of the low-wavelength extinction coefficient, while the size and thickness measurements rely on the effect of edges and quantum confinement on the optical spectra. The resultant controllability of concentration, size and thickness facilitates the preparation of dispersions with pre-determined properties such as high monolayer-content, leading to first measurement of A-exciton MoS 2 luminescence in liquid suspensions. These techniques are general and can be applied to a range of two-dimensional materials including WS 2 , MoSe 2 and WSe 2 .

Herein, we have developed a systematic study on the oxidation and passivation of mechanically exfoliated black phosphorus (BP). We analyzed the strong anisotropic behavior of BP by scanning Raman microscopy providing an accurate method for monitoring the oxidation of BP via statistical Raman spectroscopy. Furthermore, different factors influencing the environmental instability of the BP, i.e., thickness, lateral dimensions or visible light illumination, have been investigated in detail. Finally, we discovered that the degradation of few-layer BP flakes of <10 nm can be suppressed for months by using ionic liquids, paving the way for the development of BP-based technologies.

We present a photoluminescence study of freestanding and Si/SiO2 supported single-and few-layer MoS2. The single-layer exciton peak (A) is only observed in freestanding MoS2. The photoluminescence of supported single-layer MoS2 is instead originating from the A − (trion) peak as the MoS2 is n-type doped from the substrate. In bilayer MoS2, the van der Waals interaction with the substrate is decreasing the indirect band gap energy by up to ≈ 80 meV. Furthermore, the photoluminescence spectra of suspended MoS2 can be influenced by interference effects.

We report two first-order Raman modes in the spectra of few-layer MoS 2 at 286 and 471 cm −1 that are only observed at excitation energies above 2.4 eV. We show that these normally not observed modes are interlayer modes related to symmetry-forbidden modes of the single layer. Based on group theory, we provide a general treatment and systematic classification of all phonon modes in few-layer crystals with inversion symmetry and/or horizontal reflection symmetry. The results can thus be applied to different materials like few-layer graphene, transition-metal dichalcogenides, or BN. Moreover, the few-layer specific Raman modes are strongly resonant with the C optical transition in MoS 2 . We conclude that the corresponding exciton wave function is extended over all layers of the few-layer MoS 2 , in contrast to the A and B excitons.

SummaryThinning out MoS2 crystals to atomically thin layers results in the transition from an indirect to a direct bandgap material. This makes single layer MoS2 an exciting new material for electronic devices. In MoS2 devices it has been observed that the choice of materials, in particular for contact and gate, is crucial for their performance. This makes it very important to study the interaction between ultrathin MoS2 layers and materials employed in electronic devices in order to optimize their performance. In this work we used NC-AFM in combination with quantitative KPFM to study the influence of the substrate material and the processing on single layer MoS2 during device fabrication. We find a strong influence of contaminations caused by the processing on the surface potential of MoS2. It is shown that the charge transfer from the substrate is able to change the work function of MoS2 by about 40 meV. Our findings suggest two things. First, the necessity to properly clean devices after processing as contaminations have a great impact on the surface potential. Second, that by choosing appropriate materials the work function can be modified to reduce contact resistance.