Coherent diffractive imaging of individual free nanoparticles has opened routes for the in situ analysis of their transient structural, optical, and electronic properties. So far, single-shot single-particle diffraction was assumed to be feasible only at extreme ultraviolet and X-ray free-electron lasers, restricting this research field to large-scale facilities. Here we demonstrate single-shot imaging of isolated helium nanodroplets using extreme ultraviolet pulses from a femtosecond-laser-driven high harmonic source. We obtain bright wide-angle scattering patterns, that allow us to uniquely identify hitherto unresolved prolate shapes of superfluid helium droplets. Our results mark the advent of single-shot gas-phase nanoscopy with lab-based short-wavelength pulses and pave the way to ultrafast coherent diffractive imaging with phase-controlled multicolor fields and attosecond pulses.
Refraction is a well-known optical phenomenon that alters the direction of light waves propagating through matter. Microscopes, lenses and prisms based on refraction are indispensable tools for controlling the properties of light beams at visible, infrared, ultraviolet and X-ray wavelengths. The large absorption of extreme-ultraviolet (XUV) radiation in matter, however, hinders the development of refractive lenses and prisms in this spectral region. Here, we demonstrate control over the refraction of XUV radiation by using a gas jet with a density gradient across the XUV beam profile. A gas phase prism is demonstrated that leads to a frequency-dependent deflection of the XUV beam. The strong deflection in the vicinity of atomic resonances is further used to develop a deformable XUV refractive lens, with low absorption and a focal length that can be tuned by varying the gas pressure. Our results provide novel opportunities in XUV science and open a route towards the transfer of refraction-based techniques including microscopy and nanofocusing, which are well established in other spectral regions, to the XUV domain.
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The semiconductor industry continually evaluates new materials to improve the process or minimize product variability, which could create measurement challenges for metrology tools in the visible and near-infrared (NIR) spectrum. Opaque materials (i.e., ‘hard masks,’ ‘HM’) are placed in between the resist (i.e., inner layer) and process (i.e., outer layer or underlying layer) in 3D NAND or DRAM processes to control the etch of high aspect-ratio structures to maximize product yield. However, longer wavelengths (e.g., IR WL) may be required to penetrate and properly view the underlying process layer and measure OVL accurately. In this work, longer wavelengths will be evaluated to improve measurement accuracy and keep up with the increasing use of opaque materials, which is expected to increase in future nodes. We will review the benefits of IR WL to OVL measurement accuracy by quantifying the OVL residuals, contrast precision (CP), and total measurement uncertainty (TMU) on multiple DRAM and 3D NAND critical layers.
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