Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined, and new entries since June 2020 are reviewed. In this issue, charts showing efficiency improvements since 1993 are included as well as cell and module area definitions and an updated list of recognized test centres.

Organic-inorganic perovskites, such as CH3NH3PbX3 (X=I, Br, Cl), have emerged as attractive absorber materials for the fabrication of low cost high efficiency solar cells. Over the last 3 years, there has been an exceptional rise in power conversion efficiencies (PCEs), demonstrating the outstanding potential of these perovskite materials. However, in most device architectures, including the simplest thin-film planar structure, a current-voltage response displays an "anomalous hysteresis", whereby the power output of the cell varies with measurement time, direction and light exposure or bias history. Here we provide insight into the physical processes occurring at the interface between the n-type charge collection layer and the perovskite absorber. Through spectroscopic measurements, we find that electron transfer from the perovskite to the TiO2 in the standard planar junction cells is very slow. By modifying the n-type contact with a self-assembled fullerene monolayer, electron transfer is "switched on", and both the n-type and p-type heterojunctions with the perovskite are active in driving the photovoltaic operation. The fullerene-modified devices achieve up to 17.3% power conversion efficiency with significantly reduced hysteresis, and stabilized power output reaching 15.7% in the planar p-i-n heterojunction solar cells measured under simulated AM 1.5 sunlight.

No abstract

Inverted organic photovoltaic devices based on a blend of poly(3-hexylthiophene) and a fullerene have been developed by inserting a solution-processed ZnO interlayer between the indium tin oxide (ITO) electrode and the active layer using Ag as a hole-collecting back contact. Efficient electron extraction through the ZnO and hole extraction through the Ag, with minimal loss in open-circuit potential, is observed with a certified power conversion efficiency of 2.58%. The inverted architecture removes the need for the use of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) as an ITO modifier and for the use of a low-work-function metal as the back contact in the device.

So far, one of the fundamental limitations of organic photovoltaic (OPV) device power conversion efficiencies (PCEs) has been the low voltage output caused by a molecular orbital mismatch between the donor polymer and acceptor molecules. Here, we present a means of addressing the low voltage output by introducing novel trimetallic nitride endohedral fullerenes (TNEFs) as acceptor materials for use in photovoltaic devices. TNEFs were discovered in 1999 by Stevenson et al. ; for the first time derivatives of the TNEF acceptor, Lu(3)N@C(80), are synthesized and integrated into OPV devices. The reduced energy offset of the molecular orbitals of Lu(3)N@C(80) to the donor, poly(3-hexyl)thiophene (P3HT), reduces energy losses in the charge transfer process and increases the open circuit voltage (Voc) to 260 mV above reference devices made with [6,6]-phenyl-C(61)-butyric methyl ester (C(60)-PCBM) acceptor. PCEs >4% have been observed using P3HT as the donor material. This work clears a path towards higher PCEs in OPV devices by demonstrating that high-yield charge separation can occur with OPV systems that have a reduced donor/acceptor lowest unoccupied molecular orbital energy offset.

Spectrally selective light detection is vital for full-colour and near-infrared (NIR) imaging and machine vision. This is not possible with traditional broadband-absorbing inorganic semiconductors without input filtering, and is yet to be achieved for narrowband absorbing organic semiconductors. We demonstrate the first sub-100 nm full-width-at-half-maximum visible-blind red and NIR photodetectors with state-of-the-art performance across critical response metrics. These devices are based on organic photodiodes with optically thick junctions. Paradoxically, we use broadband-absorbing organic semiconductors and utilize the electro-optical properties of the junction to create the narrowest NIR-band photoresponses yet demonstrated. In this context, these photodiodes outperform the encumbent technology (input filtered inorganic semiconductor diodes) and emerging technologies such as narrow absorber organic semiconductors or quantum nanocrystals. The design concept allows for response tuning and is generic for other spectral windows. Furthermore, it is materialagnostic and applicable to other disordered and polycrystalline semiconductors.

Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined, and new entries since July 2019 are reviewed.

We report transient photocurrent measurements on solar cell structures based on dye-sensitized, porous TiO2 films filled with a liquid electrolyte. The measurements are interpreted as ambipolar diffusion; under most measurement conditions, the ambipolar diffusion coefficient is dominated by electrons diffusing in the TiO2 matrix. We report a strong dependence of the ambipolar diffusion coefficient upon the photoexcitation density, as has been proposed previously. The coefficients vary from 10-8 cm2 s-1 at low density to 10-4 cm2 s-1 for densities of 1018 cm-3. At a specified photoexcitation density, ambipolar diffusion coefficients measured using weak laser pulses and optical bias are about 10 times larger than coefficients measured using large-intensity laser pulses. We describe trapping models for these effects based on an exponential distribution (T 0 = 650 K) of electron trap levels in TiO2. We infer an electron recombination cross section less than 2 × 10-27 cm2; this value is nearly 10 orders of magnitude smaller than typical values in compact semiconductors and indicates the extraordinarily effective separation of electrons in the TiO2 matrix from electrolyte ions only nanometers distant.