kinds of solid electrolytes [29-40] have been used as the gate insulators. Within this solution processed/printable semiconductor technologies, inorganic oxides hold paramount positions owing to their unparalleled transport properties, abundance and low cost. [41-43] In fact, the performance of printed oxide TFTs have steadily improved over the recent times and have certainly become substantially superior to their organic counterparts. In this regard, among the oxide semiconductors of choice, indium oxide have received specific attention due to their chemical and environmental stability resulting in high device lifetime and particularly high carrier mobility which can be easily reproduced even when they are solution processed. [44-47] In the present study, the indium oxide precursor ink has long been adjusted for its easy printability, homogeneous film formation and improved electronic transport/carrier mobility values. With this thoroughly optimized semiconductor material, different solid electrolytic insulators in the form of CSPEs and ion gels have been examined for their device performance and relative environmental stability. Recently, solution processed high-k oxide dielectrics have also shown good promise with low process temperature and device performance. However, high performance solid electrolytes may always offer crucial advantage in terms of semiconductor/insulator interface quality, high gating efficiency, easy printability, room temperature processability and high capacitance values enabling extremely low operating voltages of the TFTs (<2 V). [38,48-51] The first notable instance of employing electrolytes in fieldeffect transistors (FETs) can be traced back to the work carried out by Bergveld in 1970, which has later been used as ion-sensitive FET sensors. [52] Tardella and Chazalviel in 1985 studied nonaqueous electrolytes. [53] One of the earliest examples of solid electrolyte has been poly(ethylene oxide) (PEO) doped with lithium salt. [54] In this regard, Frisbie and co-workers had reported solid polymer electrolyte based on mixture of lithium perchlorate (LiClO 4) salt in a PEO polymer matrix to be used as gate insulator in electronic devices. [55,56] As a result of the increased cross-linking points due to the interaction between the Li + and the PEO chains, the ion transport in these electrolytes is primarily dependent on the temperature and the Printed oxide thin film transistors (TFTs) have outperformed their organic counterparts in the recent past; printable solid electrolytic insulators have also emerged as a suitable alternative to oxide dielectrics. In the present study, multiple composite solid polymer electrolytes (CSPEs) and an easyto-formulate ion gel are fabricated and characterized for their double-layer capacitance (C DL) values and the quality of electrostatic coupling. In the next step, alongside printed In 2 O 3 as the semiconductor channel, the performance of the solid electrolytes is evaluated using printed top-gate TFTs. The semiconductor ink formulation and the device ar...
In solution‐processed flexible electronics, it is challenging to obtain superior electrical and mechanical performance simultaneously. Attempts have been made to fabricate polymer doped oxide thin film transistors (TFTs), where, polymer doping frustrates the crystal structure of the parent oxide and causes amorphization. However, it also degrades the device mobility rapidly, thereby, limiting the allowable polymer content to only small values, which may not be sufficient for decisive enhancement in mechanical performance. In contrast, here an approach is proposed, where a set of water‐insoluble and chemically inert polymers are chosen to form inorganic/organic composite semiconductors. Herein, these selected polymers oppose a large degree of intermixing with the parent oxide lattice at the atomic scale, promote its crystallization, and help to maintain the electrical properties of the oxide semiconductors intact, even when they're in near‐equal amounts. Consequently, unaltered linear mobility of 40–45 cm2 V−1 s−1 can be obtained in In2O3‐based inorganic/organic composite semiconductor TFTs with a near‐equal weight of polymeric additives. Owing to the large polymer content, the TFTs are found to survive rigorous bending fatigue tests down to 1.5 mm bending radius without any deterioration in their electrical performance and without the formation of micro‐cracks in the composite semiconductor material.
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