SmB6, a well-known Kondo insulator, has been proposed to be an ideal topological insulator with states of topological character located in a clean, bulk electronic gap, namely the Kondo hybridization gap. Seeing as the Kondo gap arises from many body electronic correlations, this would place SmB6 at the head of a new material class: topological Kondo insulators. Here, for the first time, we show that the k-space characteristics of the Kondo hybridization process is the key to unravelling the origin of the two types of metallic states experimentally observed by ARPES in the electronic band structure of SmB6(001). One group of these states is essentially of bulk origin, and cuts the Fermi level due to the position of the chemical potential 20 meV above the lowest lying 5d-4f hybridization zone. The other metallic state is more enigmatic, being weak in intensity, but represents a good candidate for a topological surface state. However, before this claim can be substantiated by an unequivocal measurement of its massless dispersion relation, our data raises the bar in terms of the ARPES resolution required, as we show there to be a strong renormalization of the hybridization gaps by a factor 2-3 compared to theory, following from the knowledge of the true position of the chemical potential and a careful comparison with the predictions from recent LDA+Gutzwiller calculations. All in all, these key pieces of evidence act as triangulation markers, providing a detailed description of the electronic landscape in SmB6, pointing the way for future, ultrahigh resolution ARPES experiments to achieve a direct measurement of the Dirac cones in the first topological Kondo insulator. * e.frantzeskakis@uva.nl † m.s.golden@uva.nl

Diamond membrane devices containing optically coherent nitrogen-vacancy (NV) centers are key to enable novel cryogenic experiments such as optical ground-state cooling of hybrid spin-mechanical systems and efficient entanglement distribution in quantum networks. Here, we report on the fabrication of a (3.4 ± 0.2) μm thin, smooth (surface roughness rq < 0.4 nm over an area of 20 μm by 30 μm) diamond membrane containing individually resolvable, narrow linewidth (< 100 MHz) NV centers. We fabricate this sample via a combination of high-energy electron irradiation, high-temperature annealing, and an optimized etching sequence found via a systematic study of the diamond surface evolution on the microscopic level in different etch chemistries. Although our particular device dimensions are optimized for cavity-enhanced entanglement generation between distant NV centers in open, tunable microcavities, our results have implications for a broad range of quantum experiments that require the combination of narrow optical transitions and micrometer-scale device geometry.

The realization of hybrid superconductor–semiconductor quantum devices, in particular a topological qubit, calls for advanced techniques to readily and reproducibly engineer induced superconductivity in semiconductor nanowires. Here, we introduce an on-chip fabrication paradigm based on shadow walls that offers substantial advances in device quality and reproducibility. It allows for the implementation of hybrid quantum devices and ultimately topological qubits while eliminating fabrication steps such as lithography and etching. This is critical to preserve the integrity and homogeneity of the fragile hybrid interfaces. The approach simplifies the reproducible fabrication of devices with a hard induced superconducting gap and ballistic normal-/superconductor junctions. Large gate-tunable supercurrents and high-order multiple Andreev reflections manifest the exceptional coherence of the resulting nanowire Josephson junctions. Our approach enables the realization of 3-terminal devices, where zero-bias conductance peaks emerge in a magnetic field concurrently at both boundaries of the one-dimensional hybrids.

In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb) 2 (Te,Se) 3 (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren et al 2011 Phys. Rev. B 84 165311). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthesized BSTS single crystals with compositions around x = 0.5 and y = 1.3. Resistance and Hall effect measurements show high resistivity and record low bulk carrier density for the composition Bi 1.46 Sb 0.54 Te 1.7 Se 1.3 . The analysis of the resistance measured for crystals with different thicknesses within a parallel resistor model shows that the surface contribution to the electrical transport amounts to 97% when the sample thickness is reduced to 1 μm. The magnetoconductance of exfoliated BSTS nanoflakes shows 2D weak antilocalization with α ≃ −1 as expected for transport dominated by topological surface states.

In situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects Ngabonziza, P.; Heimbuch, R.; de Jong, N.; Klaassen, R.A.; Stehno, M.P.; Snelder, M.; Solmaz, A.; Ramankutty, S.V.; Frantzeskakis, E.; van Heumen, E.; Koster, G.; Golden, M.S.; Zandvliet, H.J.W.; Brinkman, A. Published in:Physical Review B DOI:10.1103/PhysRevB.92.035405 Link to publicationCitation for published version (APA): Ngabonziza, P., Heimbuch, R., de Jong, N., Klaassen, R. A., Stehno, M. P., Snelder, M., ... Brinkman, A. (2015). In situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects. Physical Review B, 92(3), [035405]. https://doi.org/10.1103/PhysRevB.92.035405 General rightsIt is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s) and/or copyright holder(s), other than for strictly personal, individual use, unless the work is under an open content license (like Creative Commons). Disclaimer/Complaints regulationsIf you believe that digital publication of certain material infringes any of your rights or (privacy) interests, please let the Library know, stating your reasons. In case of a legitimate complaint, the Library will make the material inaccessible and/or remove it from the website. Please Ask the Library: http://uba.uva.nl/en/contact, or a letter to: Library of the University of Amsterdam, Secretariat, Singel 425, 1012 WP Amsterdam, The Netherlands. You will be contacted as soon as possible. Combined in situ x-ray photoemission spectroscopy, scanning tunneling spectroscopy, and angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi 2 Te 3 on lattice mismatched substrates reveal high quality stoichiometric thin films with topological surface states without a contribution from the bulk bands at the Fermi energy. The absence of bulk states at the Fermi energy is achieved without counterdoping. We observe that the surface morphology and electronic band structure of Bi 2 Te 3 are not affected by in vacuo storage and exposure to oxygen, whereas major changes are observed when exposed to ambient conditions. These films help define a pathway towards intrinsic topological devices.

The main scientific activity in the field of topological insulators (TIs) consists of determining their electronic structure by means of magneto-transport and electron spectroscopy with a view to devices based on topological transport. There is however a caveat in this approach. There are systematic experimental discrepancies on the electronic structure of the most pristine surfaces of TI single crystals as determined by Shubnikov de Haas (SdH) oscillations and by Angle Resolved PhotoElectron Spectroscopy (ARPES). We identify intense ultraviolet illumination -that is inherent to an ARPES experiment-as the source for these experimental differences. We explicitly show that illumination is the key parameter, or in other words the trigger, for energetic shifts of electronic bands near the surface of a TI crystal. This finding revisits the common belief that surface decoration is the principal cause of surface band bending and explains why band bending is not a prime issue in the illumination-free magneto-transport studies. Our study further clarifies the role of illumination on the electronic band structure of TIs by revealing its dual effect: downward band bending on very small timescales followed by band flattening at large timescales. Our results therefore allow us to present and predict the complete evolution of the band structure of TIs in a typical ARPES experiment. By virtue of our findings, we pinpoint two alternatives of how to approach flat band conditions by means of photon-based techniques and we suggest a microscopic mechanism that can explain the underlying phenomena. *

Topological insulators are a novel materials platform with high applications potential in fields ranging from spintronics to quantum computation. In the ongoing scientific effort to demonstrate controlled manipulation of their electronic structure by external means, i.e., the provision of knobs with which to tune properties, stoichiometric variation and surface decoration are two effective approaches that have been followed. In angleresolved photoelectron spectroscopy (ARPES) experiments, both approaches are seen to lead to electronic band-structure changes. Most importantly, such approaches result in variations of the energy position of bulk and surface-related features and the creation of two-dimensional electron gases. The data presented here demonstrate that a third manipulation handle is accessible by utilizing the amount of super-band-gap light a topological insulator surface has been exposed to under typical ARPES experimental conditions. Our results show that this third knob acts on an equal footing with stoichiometry and surface decoration as a modifier of the electronic band structure, and that it is in continuous and direct competition with the latter. The data clearly point towards surface photovoltage and photoinduced desorption as the physical phenomena behind modifications of the electronic band structure under exposure to high-flux photons. We show that the interplay of these phenomena can minimize and even eliminate the adsorbate-related surface band bending on typical binary, ternary, and quaternary Bi-based topological insulators. Including the influence of the sample temperature, these data set up a detailed framework for the external control of the electronic band structure in topological insulator compounds in an ARPES setting. Four external knobs are available: bulk stoichiometry, surface decoration, temperature, and photon exposure. These knobs can be used in conjunction to fine tune the band energies near the surface and consequently influence the topological properties of the relevant electronic states.

Strong electron correlations in rare earth hexaborides can give rise to a variety of interesting phenomena like ferromagnetism, Kondo hybridization, mixed valence, superconductivity and possibly topological characteristics. The theoretical prediction of topological properties in SmB6 and YbB6, has rekindled the scientific interest in the rare earth hexaborides, and high-resolution ARPES has been playing a major role in the debate. The electronic band structure of the hexaborides contains the key to understand the origin of the different phenomena observed, and much can be learned by comparing the experimental data from different rare earth hexaborides. We have performed high-resolution ARPES on the (001) surfaces of YbB6, CeB6 and SmB6. On the most basic level, the data show that the differences in the valence of the rare earth element are reflected in the experimental electronic band structure primarily as a rigid shift of the energy position of the metal 5d states with respect to the Fermi level. Although the overall shape of the d-derived Fermi surface contours remains the same, we report differences in the dimensionality of these states between the compounds studied. Moreover, the spectroscopic fingerprint of the 4f states also reveals considerable differences that are related to their coherence and the strength of the d-f hybridization. For the SmB6 case, we use ARPES in combination with STM imaging and electron diffraction to reveal time dependent changes in the structural symmetry of the highly debated SmB6(001) surface. All in all, our study highlights the suitability of electron spectroscopies like high-resolution ARPES to provide links between electronic structure and function in complex and correlated materials such as the rare earth hexaborides.