Hybrid perovskites are currently the fastest growing photovoltaic technology, having reached a solar cell efficiency of over 20%. One possible strategy to further improve the efficiency of perovskite solar cells is to tune the degree of octahedral tilting of the halide frame, since this in turn affects the optical band gap and carrier effective masses. It is commonly accepted that the ion sizes are the main control parameter influencing the degree of tilting in perovskites. Here we re-examine the origin of octahedral tilts in halide perovskites from systematic first-principles calculations. We find that while steric effects dominate the tilt magnitude in inorganic halides, hydrogen bonding between an organic A-cation and the halide frame plays a significant role in hybrids. For example, in the case of MAPbI 3 , our calculations suggest that, without the contribution from hydrogen bonding, the octahedra would not tilt at all. These results demonstrate that tuning the degree of hydrogen bonding can be used as an additional control parameter to optimize the photovoltaic properties of perovskites.

Atomically thin two-dimensional (2D) materials have received considerable research interest due to their extraordinary properties and promising applications. Here we predict the monolayered indium triphosphide (InP) as a new semiconducting 2D material with a range of favorable functional properties by means of ab initio calculations. The 2D InP crystal shows high stability and promise of experimental synthesis. It possesses an indirect band gap of 1.14 eV and a high electron mobility of 1919 cm V s, which can be strongly manipulated with applied strain. Remarkably, the InP monolayer suggests tunable magnetism and half-metallicity under hole doping or defect engineering, which is attributed to the novel Mexican-hat-like bands and van Hove singularities in its electronic structure. A semiconductor-metal transition is also revealed by doping 2D InP with electrons. Furthermore, monolayered InP exhibits extraordinary optical absorption with significant excitonic effects in the entire range of the visible light spectrum. All these desired properties render 2D InP a promising candidate for future applications in a wide variety of technologies, in particular for electronic, spintronic, and photovoltaic devices.

The polar interface between LaAlO3 and SrTiO3 has shown promise as a field effect transistor, with reduced (nanoscale) feature sizes and potentially added functionality over conventional semiconductor systems. However, the mobility of the interfacial two-dimensional electron gas (2DEG) is lower than desirable. Therefore to progress, the highly debated origin of the 2DEG must be understood. Here we present a case for surface redox reactions as the origin of the 2DEG, in particular surface O vacancies, using a model supported by first principles calculations that describes the redox formation. In agreement with recent spectroscopic and transport measurements, we predict a stabilization of such redox processes (and hence Ti 3d occupation) with film thickness beyond a critical value, which can be smaller than the critical thickness for 2D electronic conduction, since the surface defects generate trapping potentials that will affect the interface electron mobility. Several other recent experimental results, such as lack of core level broadening and shifts, find natural explanation. Pristine systems will likely require changed growth conditions or modified materials with a higher vacancy free energy.

First principles calculations on the hybrid perovskite CH3NH3PbI3 predict strong hydrogen-bonding which influences the structure and dynamics of the methylammonium cation and reveal its interaction with the tilting of the PbI6 octahedra. The calculated atomic coordinates are in excellent agreement with neutron diffraction results.

The response of oxide thin films to polar discontinuities at interfaces and surfaces has generated enormous activity due to the variety of interesting effects that it gives rise to. A case in point is the discovery of the electron gas at the interface between LaAlO3 and SrTiO3, which has since been shown to be quasi-two-dimensional, switchable, magnetic and/or superconducting. Despite these findings, the origin of the two-dimensional electron gas is highly debated and several possible mechanisms remain. Here we review the main proposed mechanisms and attempt to model expected effects in a quantitative way with the ambition of better constraining what effects can/cannot explain the observed phenomenology. We do it in the framework of a phenomenological model constructed to provide an understanding of the electronic and/or redox screening of the chemical charge in oxide heterostructures. We also discuss the effect of intermixing, both conserving and not conserving the total stoichiometry.

The physics of oxide superlattices is considered for pristine (001) multilayers of the band insulators LaAlO3 and SrTiO3 with alternating p and n interfaces. A model of charged capacitor plates offers a simple paradigm to understand their dielectric properties and the insulator to metal transition (IMT) at interfaces with increasing layer thickness. The model is supported by first-principles results based on density-functional theory. The charge at insulating interfaces is argued and found to be as predicted from the formal ionic charges, not populations. Different relative layer thicknesses produce a spontaneous polarization of the system, and allow manipulation of the interfacial electron gas. Large piezoresistance effects can be obtained from the sensitivity of the IMT to lateral strain. Carrier densities are found to be ideal for exciton condensation.

Perovskite oxides are already widely used in industry and have huge potential for novel device applications thanks to the rich physical behaviour displayed in these materials. The key to the functional electronic properties exhibited by perovskites is often the so-called Jahn-Teller distortion. For applications, an electrical control of the Jahn-Teller distortions, which is so far out of reach, would therefore be highly desirable. Based on universal symmetry arguments, we determine new lattice mode couplings that can provide exactly this paradigm, and exemplify the effect from first-principles calculations. The proposed mechanism is completely general, however for illustrative purposes, we demonstrate the concept on vanadium based perovskites where we reveal an unprecedented orbital ordering and Jahn-Teller induced ferroelectricity. Thanks to the intimate coupling between Jahn-Teller distortions and electronic degrees of freedom, the electric field control of Jahn-Teller distortions is of general relevance and may find broad interest in various functional devices.

Local electrochemical phenomena on the surfaces of the LaAlO(3)-SrTiO(3) heterostructure are explored using unipolar and bipolar dynamic electrochemical strain microscopy (D-ESM). The D-ESM suggests the presence of at least two distinct electrochemical processes, including fast reversible low-voltage process and slow high-voltage process. The latter process is associated with static surface deformations in the sub-nanometer regime. These behaviors are compared with Kelvin probe force microscopy hysteresis data. The possible origins of observed phenomena are discussed, and these studies suggest that charge-writing behavior in LAO-STO includes a strong surface/bulk electrochemical component and is more complicated than simple screening by surface adsorbates.