Photonic integrated circuits (PICs) provide a compact and stable platform for quantum photonics.Here we demonstrate a silicon photonics quantum key distribution (QKD) transmitter in the first high-speed polarization-based QKD field tests. The systems reach composable secret key rates of 950 kbps in a local test (on a 103.6-m fiber with a total emulated loss of 9.2 dB) and 106 kbps in an intercity metropolitan test (on a 43-km fiber with 16.4 dB loss). Our results represent the highest secret key generation rate for polarization-based QKD experiments at a standard telecom wavelength and demonstrate PICs as a promising, scalable resource for future formation of metropolitan quantum-secure communications networks.Quantum key distribution (QKD) remains the only quantum-resistant method of sending secret information at a distance [1,2]. The first QKD system ever devised used polarization of photons to encode information [3,4]. QKD has since progressed rapidly to several deployed systems that can reach point-to-point secret key generation rates in the upwards of 100 kbps [5][6][7][8] and to other photonic degrees of freedom: time [9][10][11][12], frequency [13][14][15][16], phase [17], quadrature [18][19][20][21], and orbital angular momentum [22]. While polarization remains an attractive choice for free-space QKD due to its robustness against turbulence [23][24][25][26][27][28], polarization is commonly thought to be unstable for fiber-based QKD. For this reason, there has been a strong interest in translating the polarization QKD components into photonic integrated circuits (PICs), which provide a compact and phase-stable platform capable of correcting for polarization drifts in the channel. Recently, silicon-based polarization QKD transmitters were used for laboratory QKD demonstrations [29,30], but their performance advantage over standard telecommunication components has yet to be demonstrated. Here we report the first field tests using high-speed silicon photonics-based transmitter for polarization-encoded QKD.The silicon photonics platform allows for the integration of multiple high-speed photonic operations into a single compact circuit [31][32][33][34]. Operating at gigahertz bandwidth, a silicon photonics polarization QKD transmitter can correct for polarization drifts with typical millisecond time scales in a metropolitan-scale fiber link. Furthermore, silicon nanophotonic devices are compatible with the existing complementary metal-oxidesemiconductor (CMOS) processes that have enabled monolithic integration of photonics and electronics, possibly leading to future widespread utilization of QKD.The QKD transmitter demonstrated here is manufactured using a CMOS-compatible process. The trans-mitter combines a 10-Gbps Mach-Zehnder Modulator (MZM) with interleaved grating couplers, which convert the polarization of a photon in an optical fiber into the path the photon takes in the integrated circuit, and vice versa. The high-speed polarization control is enabled by electro-optic carrier depletion modulation withi...

Silicon photonics is a platform that enables densely integrated photonic components and systems and integration with electronic circuits. Depletion mode modulators designed on this platform suffer from a fundamental frequency response limit due to the mobility of carriers in silicon. Lithium niobate-based modulators have demonstrated high performance, but the material is difficult to process and cannot be easily integrated with other photonic components and electronics. In this manuscript, we simultaneously take advantage of the benefits of silicon photonics and the Pockels effect in lithium niobate by heterogeneously integrating silicon photonic-integrated circuits with thin-film lithium niobate samples. We demonstrate the most CMOS-compatible thin-film lithium niobate modulator to date, which has electro-optic 3 dB bandwidths of 30.6 GHz and half-wave voltages of 6.7 V×cm. These modulators are fabricated entirely in CMOS facilities, with the exception of the bonding of a thin-film lithium niobate sample post fabrication, and require no etching of lithium niobate.

We demonstrate a silicon photonic transceiver circuit for high-speed discrete variable quantum key distribution that employs a common structure for transmit and receive functions. The device is intended for use in polarization-based quantum cryptographic protocols, such as BB84. Our characterization indicates that the circuit can generate the four BB84 states (TE/TM/45°/135° linear polarizations) with >30 dB polarization extinction ratios and gigabit per second modulation speed, and is capable of decoding any polarization bases differing by 90° with high extinction ratios.

High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handle high optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHz at 1550 nm. The design does not require etching of thin-film LN, and uses hybrid optical modes formed by bonding LN to planarized silicon photonic waveguide circuits. A high optical power handling capability in the MZM was achieved by carefully tapering the underlying Si waveguide to reduce the impact of optically-generated carriers, while retaining a high modulation efficiency. The MZM has a $$V_\pi L$$ V π L product of 3.1 V.cm and an on-chip optical insertion loss of 1.8 dB.

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