We have demonstrated a general framework for realizing and modulating perpendicular magnetic anisotropy in a rare-earth-element and heavy-metal -free material system. Using GaAs(001)/Fe(001) template, we have developed a synthesis scheme to produce epitaxial body center tetragonal Fe-N with (001) texture. By varying the N doping concentration, the crystal tetragonality (c/a) can be tuned in a relatively wide range. It is found that the Fe-N layer developed a strong perpendicular magnetic crystalline anisotropy (MCA) as it approaches the iron nitride interstitial solubility limit. Further annealing process significantly improves the MCA due to the formation of chemically ordered Fe 16 N 2 . In addition to realize an MCA up to 10 7 erg/cm 3 , the spin polarization ratio (P~0.52), as probed directly by a Point Contact Andreev Reflection (PCAR) method, even shows a moderate increase in comparison with normal metal Fe (P~0.45). These combined properties make this material system a promising candidate for applications in spintronic devices and also potential rare-earth-element free magnets.
We present a systematic study to address a longstanding mystery in magnetic materials and magnetism, whether there is giant saturation magnetization in Fe 16 N 2 and why. Experimental results based on sputtered thin film samples are presented. The magnetism of Fe 16 N 2 is discussed systematically from the aspects of material processing, magnetic characterization and theoretical investigation. It is observed that thin films with Fe 16 N 2 + Fe 8 N mixture phases and high degree of N ordering, exhibit a saturation magnetization up to 2.68T at room temperature, which substantially exceeds the ferromagnetism limit based on the traditional band magnetism understanding. From X-ray magnetic circular Dichorism (XMCD) experiment, transport measurement and first-principle calculation based on LDA+U method, it is both experimentally and theoretically justified that the origin of giant saturation magnetization is correlated with the formation of highly localized 3d electron states in this Fe-N system. A large magnetocrystalline anisotropy for such a material is also discussed. Our proposed "cluster+atom" theory provides promising directions on designing novel magnetic materials with unique performances.
Partially ordered Fe16N2 thin films have been fabricated on Fe (001)-buffered GaAs (001) single-crystal substrates by a facing target sputtering process. The saturation magnetization has been systematically investigated as a function of N site ordering in partially ordered Fe16N2 thin films, which is found to be increased monotonically with the increase in the N site ordering parameter, reaching up to 2.68 T at high ordering case. A model discussion is provided based on the partial localization of 3d electron states in this material system, which successfully rationalizes the formation of the giant saturation magnetization in chemically ordered Fe16N2. We further demonstrate that the average magnetic moment of partially ordered Fe16N2 sensitively depends on the special arrangement of Fe6N clusters, which is the key to realize high magnetic moment in this material system.
We report a direct observation of giant saturation magnetization in Fe16N2. By exploiting thin film epitaxy, which provides controlled biaxial stress to create lattice distortion, we demonstrate that giant magnetism can be established in Fe16N2 thin film coherently grown on MgO (001) substrate. Explored by polarized neutron reflectometry, the depth-dependent saturation magnetic induction (Bs) of epitaxial Fe16N2 thin films is visualized, which reveals a strong correlation with the in-plane lattice parameter and tensile strain developed at near substrate interface. With controlled growth process and dimension adjustment, the Bs of these films can be modulated over a broad range, from ∼2.1 Tesla (T) (normal Bs) up to ∼3.1 T (giant Bs).
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