Investigation of γ′-Fe4N thin films deposited on Si(1 0 0) and GaAs(1 0 0) substrates by facing target magnetron sputtering

Na, Yuanyuan; Xiang, Jinzhong; Ji, Nian; Wang, Jian Ping

doi:10.1016/j.jcrysgro.2015.05.028

Cited by 8 publications

(9 citation statements)

References 37 publications

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“…This result is similar to the M s of Fe 4 N thin films reported by several other experimental works. 10,11,15 It is also consistent with our previous experiment result of Fe 4 N. 19 The M s of Fe 4 N obtained in this work shows smaller value than the theoretical calculation results that are in a range of 2.1-2.45 µ B /Fe atom [20][21][22] (1410-1650 emu/cm 3 ) at zero temperature (0K). We attribute the smaller M s of Fe 4 N thin films in our experiment to the thermal excitation on magnetization as well as the defects and grain boundaries of the thin film sample.…”

Section: Resultssupporting

confidence: 92%

Deposition and spin polarization study of Fe4N thin films with (111) orientation

Osofsky

Jensen

et al. 2017

AIP Advances

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We have successfully deposited Fe4N thin films with (111) out-of-plane orientation on thermally oxidized Si substrates using a facing-target-sputtering system. A Ta/Ru composite buffer layer was adopted to improve the (111) orientation of the Fe4N thin films. The N2 partial pressure and substrate temperature during sputtering were optimized to promote the formation of the Fe4N phase. Furthermore, we measured the transport spin polarization of (111) oriented Fe4N by the point contact Andreev reflection (PCAR) technique. The spin polarization ratio was determined to be 0.50 using a modified BTK model. The film thickness dependence of the spin polarization was also investigated. The spin polarization of Fe4N measured by PCAR does not show degradation as the sample thickness was reduced to 10nm.

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Section: Resultssupporting

confidence: 92%

Deposition and spin polarization study of Fe4N thin films with (111) orientation

Osofsky

Jensen

et al. 2017

AIP Advances

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“…Obtained results can be applied to understand very large differences in the magnetization of Fe 4 N films studied in the literature as shown in Table I. It can be anticipated that interdiffusion can also take place from other substrates, e.g., Si, SrTiO 3 , and MgO into Fe 4 N (or any other film) and in this situation, the randomly generated interface may lead to the randomness in the values of M s that can be seen in Fe 4 N films grown in different works [14][15][16][17][18][19]28].…”

Section: B Structural and Magnetic Depth Profiles Of Fe 4 N Filmsmentioning

confidence: 99%

“…Moreover, different deposition methodology may also lead to different microstructure and hence different M s values in Fe 4 N thin film. Mostly, direct current magnetron sputtering (dcMS) [14][15][16][17][18] and molecular beam epitaxy (MBE) [19,[28][29][30][31] methods have been extensively used to prepare the Fe 4 N films, whereas a relatively new but very promising technique-high power impulse magnetron sputtering (HiPIMS)-has not yet been employed. There are several advantages inherent to the HiPIMS process over the conventional dcMS process such as improvement of the film quality by denser microstructure and enhanced adhesion etc.…”

Section: Introductionmentioning

confidence: 99%

Effect of interfacial interdiffusion on magnetism in epitaxial Fe4N films on LaAlO3 substrates

Pandey

Pütter

Amir

et al. 2019

Phys. Rev. Materials

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Epitaxial Fe 4 N thin films grown on LaAlO 3 (LAO) substrate using sputtering and molecular beam epitaxy techniques have been studied in this work. Within the sputtering process, films were grown with conventional direct current magnetron sputtering (dcMS) and using a high power impulse magnetron sputtering (HiPIMS) process. Surface morphology and depth profile studies on these samples reveal that HiPIMS deposited film has the lowest roughness, the highest packing density, and the sharpest interface. We found that the substrate-film interface and the microstructure play a vital role in affecting the electronic hybridization and magnetic properties of Fe 4 N films. La from the LAO substrate and Fe from the film interdiffuse and form an undesired interface. The magnetic moment (M s) was compared using bulk, element-specific and magnetic depth profiling techniques. We found that M s was the highest when the thickness of the interdiffused layer was lowest and such conditions can only be achieved in the HiPIMS grown samples. The presence of a small moment at the N site was also evidenced by element-specific x-ray circular dichroism measurement in the HiPIMS grown sample. A large variation in the M s values of Fe 4 N films found in the experimental works carried out so far could be due to such an interdiffused layer which is generally not expected to form in otherwise stable oxide substrate at a low substrate temperature ≈675 K. In addition, a consequence of substrate-film interdiffusion and microstructure resulted in the different kinds of magnetic anisotropies in Fe 4 N films grown using different techniques. A detailed investigation of the substrate-film interface and microstructure on the magnetization of Fe 4 N film is presented and discussed in this work.

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“…Si, SrTiO 3 and MgO into Fe 4 N (or any other film) and in this situation the randomly generated interface may lead to the randomness in the values of M s that can be seen in Fe 4 N films grown in different works. [10][11][12][13][14][15][16] C. Elemental-specific magnetization Theoretical calculations suggest a small but oppositely aligned moment at the N site in Fe 4 N. The origin of such magnetic moment was explained in terms of the extension of spin-down electron wave function near the interstitial region using spin-density plots located within the muffintin spheres. [43][44][45] However, to the best of our knowledge, experimentally the magnetic moment at the N site has only been studied by Ito et al using XMCD measurements, 17 but there also a large discrepancy can be seen between the theoretically simulated and experimentally observed N K-edge spectra.…”

Section: B Structural and Magnetic Depth Profiles Of Fe4n Filmsmentioning

confidence: 99%

“…Moreover, different deposition methodology may also lead to different microstructure and hence different M s values in Fe 4 N thin film. Mostly, direct current magnetron sputtering (dcMS) [10][11][12][13][14] and molecular beam epitaxy (MBE) 8,9,[15][16][17] methods have been extensively used to prepare the Fe 4 N films. Whereas, relatively new but a very promising technique -high power impulse magnetron sputtering (HiPIMS) has not yet been employed.…”

Section: Introductionmentioning

confidence: 99%

Influence of interface and microstructure on magnetization of epitaxial Fe4N thin film

Pandey,

Putter,

Amir

et al. 2019

Preprint

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Investigation of γ′-Fe4N thin films deposited on Si(1 0 0) and GaAs(1 0 0) substrates by facing target magnetron sputtering

Cited by 8 publications

References 37 publications

Deposition and spin polarization study of Fe4N thin films with (111) orientation

Deposition and spin polarization study of Fe4N thin films with (111) orientation

Effect of interfacial interdiffusion on magnetism in epitaxial Fe4N films on LaAlO3 substrates

Influence of interface and microstructure on magnetization of epitaxial Fe4N thin film

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