Herein,
we present a study investigating the reaction conditions to wet etch
monocrystalline silicon in the subcritical region of water, specifically
from 200 to 300 °C. In the subcritical region there is a departure
of thermodynamic, transport, and chemical properties from normal conditions.
This has the potential to affect the reaction paths for the dissolution
of silicon, by modifying the local concentration of reactants and
products, by altering the relative activation energy of different
reactions, or by changing the polarity of the water. Furthermore,
our methodology uses concentrations of etching agent markedly lower
than previous works (our reactions were conducted at [KOH] = 0.03–0.7%/wt).
The results of the study suggest that dilute etchant solutions at
high temperatures can produce results comparable to those reported
at atmospheric conditions using higher concentrations of etchants.
Based on the results obtained, the main key factors in the etch rates
were crystallographic orientation of the wafer, composition of the
etching solution, and temperature.
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