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A simple model is developed for the admittance of a metal-insulator-semiconductor ͑MIS͒ capacitor which includes the effect of a guard ring surrounding the Ohmic contact to the semiconductor. The model predicts most of the features observed in a MIS capacitor fabricated using regioregular poly͑3-hexylthiophene͒ as the active semiconductor and polysilsesquioxane as the gate insulator. In particular, it shows that when the capacitor is driven into accumulation, the parasitic transistor formed by the guard ring and Ohmic contact can give rise to an additional feature in the admittance-voltage plot that could be mistaken for interface states. When this artifact and underlying losses in the bulk semiconductor are accounted for, the remaining experimental feature, a peak in the loss-voltage plot when the capacitor is in depletion, is identified as an interface ͑or near interface͒ state of density of ϳ4 ϫ 10 10 cm −2 eV −1 . Application of the model shows that exposure of a vacuum-annealed device to laboratory air produces a rapid change in the doping density in the channel region of the parasitic transistor but only slow changes in the bulk semiconductor covered by the gold Ohmic contact.

This work describes the preparation and characterization of composite materials obtained by the combination of natural rubber (NR) and carbon black (CB) in different percentages, aiming to improve their mechanical properties, processability, and electrical conductivity, aiming future applications as transducer in pressure sensors. The composites NR/CB were characterized through optical microscopy (OM), DC conductivity, thermal analysis using differential scanning calorimetry (DSC), dynamic mechanical thermal analysis (DMA), thermogravimetry (TGA), and stress-strain test. The electrical conductivity varied between 10 29 and 10 S m 21, depending on the percentage of CB in the composite. Furthermore, a linear (and reversible) dependence of the conductivity on the applied pressure between 0 and 1.6 MPa was observed for the sample with containing 80 wt % of NR and 20% of CB.

The production of low cost sensors to monitor environment in some industrial sectors is a current need. In aviculture centers, for example, the concentration of ammonia gas is related to humidity, and it is necessary to control it to avoid contamination. With this need in mind, this paper presents the preparation and characterization of a low cost humidity sensor based on poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) and polyaniline fully printed onto paper by a commercial HP printer. Using electrochemical impedance spectroscopy, an equivalent circuit containing resistive and capacitive parameters was proposed. The resistive parameter R1 is related to values of ambient humidity. The R1 values showed a sensitive response of 200% when relative humidity changes 80%, taking 10 min to reach saturation point. Moreover, the device showed good stability when humidity remained constant. These results indicate that the proposed device is suitable for applying as a humidity sensor that costs less than 1 Euro cent.

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Low frequency admittance measurements are used to determine the density of interface states in metal-insulator-semiconductor diodes based on the unintentionally doped, p-type semiconductor poly(3-hexylthiophene). After vacuum annealing at 90°C, interface hole trapping states are shown to be distributed in energy with their density decreasing approximately linearly from ∼20×1010to5×1010cm−2eV−1 over an energy range extending from 0.05to0.25eV above the bulk Fermi level.