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Nobel metal/TiO2 structures are used as catalysts in chemical reactors, active components in TiO2-based electronic devices, and connections between such devices and the outside circuitry. Here, we investigate the energy barrier at the junctions between vacuum-deposited Ag, Au, and Pt thin films and TiO2 layers by recording their electrical current vs. voltage diagrams and spectra of optical responses. Deposited Au/, Pt/, and Ag/TiO2 behave like contacts with zero junction energy barriers, but the thermal annealing of the reverse-biased devices for an hour at 523 K in air converts them to Schottky diodes with high junction energy barriers, decreasing their reverse electric currents up to 106 times. Similar thermal processing in vacuum or pure argon proved ineffective. The highest energy barrier and the lowest reverse current among the devices examined belong to the annealed Ag/TiO2 contacts. The observed electronic features are described based on the physicochemical parameters of the constituting materials. The formation of higher junction barriers with rutile than with anatase is demonstrated.

Recent intensive investigations on metal/metal oxide/metal structures have targeted nanometric single grain oxides at high electric fields. Similar research on thicker polycrystalline oxide layers can bridge the results to the prior literature on varistors and may uncover novel ionic/electronic features originating from the conduction mechanisms involving grain boundaries. Here, we investigate electronic conduction in Ti/poly-TiO2−x/Ti structures with different oxygen vacancy distributions and describe the observed features based on the motion and rearrangement of the ionized oxygen vacancies (IOVs) on the grain facets rather than the grain interiors. Containing no interface energy barrier, Ti/poly-TiO2/Ti devices demonstrate high resistance ohmic conduction at biasing fields below 5 × 106 V.m−1; higher fields drive the samples to a distinctly nonlinear and hysteretic low resistance status. The observed threshold is two orders of magnitude smaller than the typical resistance switching fields reported for the nanosized single grain memristors. This is consistent with the smaller activation energies reported for the IOV motion on the rutile facets than its interior. The presented model describes the observed dependence of the threshold field on the relative humidity of the surrounding air based on the lower activation energies reported for the hydroxyl-assisted IOV motion on the rutile facets.

In this paper, a compact optical high-speed 1-bit comparator is proposed based on photonic crystals. In this structure, the nonlinear rods are used at the cross-connecting point of two optical waveguides. The optical transmission and reflection from these rods depend on the amount of the optical intensity. In response to the different states of the input ports, different values of the optical power reach these rods and the interference patterns make the correct function of the output ports. The refractive index and the Kerr coefficient of nonlinear rods are 1.4 m 2 / W and 10 − 14 m 2 / W , respectively. The footprint of the structure is 55 µ m 2 , which is much smaller than the previous works. Besides, the lower delay time is the other advantage of this work compared with the previous works. Based on the simulation results, the proposed structure can be used in integrated optical circuits.

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In this paper, an electro-optical 4-to-2 encoder based on a photonic crystal is presented. The structure is composed of four silicon waveguides, four photonic crystal structures including the graphene– A l 2 O 3 stacks, and two optical combiners. Two one-dimensional arrays of air holes in the silicon background are designed parallel to the waveguides. Also, a graphene– A l 2 O 3 stack is placed at the center of each array, which provides the desired interferences. This feature is used for controlling the optical wave transmission through the waveguides. Using two optical combiners at the end of two waveguides, the received signals from the waveguides will be guided toward the output ports. The amount of the transmitted signal from input ports to the output of the encoder can be controlled by applying the proper chemical potential to the graphene-based stacks. The simulation results show that the encoding operation can be achieved by using 0.2 eV and 0.8 eV for chemical potentials. In addition, the normalized output power margins for logic 0 and 1 are calculated to be 8.2% and 46.7%, respectively. The footprint for the proposed structure is approximately equal to 127 µ m 2 . Also, the required optical power intensity at input ports is 100 m W / µ m 2 .

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