The electrical and optical properties of a stacked graphene p–n junction were investigated. N-type and p-type graphene films epitaxially grown on a SiC substrate were directly bonded to each other in a face-to-face manner. The current–voltage characteristics of the graphene junction diode exhibited an Ohmic behavior below 20 V. The conductance increased in the bias range above 20 V and had a peak around 65 V. The emission spectrum and temperature of the graphene p–n junction were measured using Fourier-transform far-infrared (FTIR) spectroscopy and infrared bolometer array. An electrically induced blackbody-like radiation with a peak wavelength of 10.2 μm was observed. Although the temperature change estimated using the bolometer results was 66 K at a power of 1.2 W, the peak wavelength of the FTIR spectrum was constant. An electrically induced blackbody-like far-infrared emission diode with a defined peak wavelength was successfully realized using the stacked graphene p–n junctions.
The far-infrared emission properties of epitaxial graphene on SiC obtained by current injection were investigated using an infrared camera and Fourier-transform infrared spectroscopy. The radiation directivity from the graphene emitter was observed in the directions perpendicular to the surface and edge of the sample. The emission energy density from the graphene edge was larger than that from the graphene surface in all directions. The maximum measured temperature change at 0.4 W for the edge emission was 76.1 K for a tilt angle of 50° and that for the surface emission was 54.1 K for 0°. A blackbody-like emission spectrum with a constant peak wavelength of 10.0 µm, regardless of the applied electrical power, was observed for both the surface and edge. A far-infrared light emitter was successfully realized using single-crystal graphene on SiC.
The far-infrared emission properties of epitaxial graphene on SiC obtained by current injection were investigated using an infrared camera and Fourier-transform infrared spectroscopy. The radiation directivity from the graphene emitter was observed in the directions perpendicular to the surface and edge of the sample. The emission energy density from the graphene edge was larger than that from the graphene surface in all directions. The maximum measured temperature change at 0.4 W for the edge emission was 76.1 K for a tilt angle of 50° and that for the surface emission was 54.1 K for 0°. A blackbody-like emission spectrum with a constant peak wavelength of 10.0 µm, regardless of the applied electrical power, was observed for both the surface and edge. A far-infrared light emitter was successfully realized using single-crystal graphene on SiC.
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