We report Raman studies of GaAs and InAs nanowires (NWs) grown on SiO2 and GaAs surfaces by means of catalyst-assisted molecular beam epitaxy. We have investigated several tens of NWs grown using either Mn or Au as a catalyst. The LO and TO phonon lines of the NWs showed an energy downshift and a broadening as compared to the lines usually observed in the corresponding bulk materials. A doublet is sometimes observed in the LO region due to the observation of a signal attributed to the surface optical (SO) phonon. The energy position of the SO phonon agrees with the values expected considering the section diameter of the NWs. LO and TO downshifts are due to the presence of structural defects within the NWs. The larger the energy downshift, the smaller the dimension of the defect-free regions. The results demonstrate that different catalysts provide wires with comparable crystal quality. The measurements also point out that differences in defect density can be found in wires coming from the same batch indicating that a substantial effort will be needed to obtain high homogeneities of the NW quality.

Micro-Raman spectroscopy is employed to study the phonon confinement in Au-and Mn-catalyzed GaAs and InAs nanowires. The phonon confinement model is used to fit the LO phonon peaks, which also takes into account the contribution to the asymmetry of the line shape due to the presence of surface optical ͑SO͒ phonons and structural defects. This also allows us to determine the correlation lengths in these wires, that is the average distance between defects and the defect density in these nanowires. Influence of these defects on the SO phonon is also investigated. A good agreement between the experimental results and the calculations for the SO phonon mode by using the dielectric continuum model is also obtained.

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The surface, structural, and mechanical properties of zirconium after irradiation with Ti: sapphire laser (800 nm, 30 fs, 1 kHz) have been investigated. The zirconium targets were exposed for a varying number of laser pulses ranging from 500 to 2000 at a fixed fluence of 3.6 J/cm 2 corresponding to an intensity of 1.2×10 14 W/cm 2 in ambient environments of deionized water and propanol. A scanning electron microscope (SEM) was employed to investigate the surface morphology of the irradiated zirconium. The SEM analysis shows the formation of various kinds of features including nanoscale laser induced periodic surface structures (LIPSS), sponge like surface structure, flakes, conical structures, droplets, pores, and cavities. The energy dispersive x-ray spectroscopy (EDS) analysis exhibits the variation in chemical composition along with an enhanced diffusion of oxygen under both ambient conditions. The crystal structure and phase analyses of the exposed targets were explored by x-ray diffraction (XRD) and Raman spectroscopy techniques, respectively. The XRD analysis confirms the presence of various phases of zirconium hydride and zirconia after ablation in both de-ionized water and propanol. However, excessive hydrides are formed in the case of propanol. The Raman analysis supports the EDS and XRD results. It also reveals the presence of oxides (zirconia) after irradiation in both de-ionized water and propanol environments. The chemical reactivity of zirconium was significantly improved in the presence of liquids which were accountable for the growth of novel phases and modification in the chemical composition of the irradiated Zr. A nanohardness tester was employed to measure the nanohardness of the laser treated targets. The initial increase and then decrease in nanohardness was observed with an increase in the number of laser pulses in the de-ionized water environment. In the case of propanol, a continuous decrease in hardness was observed.

Self-assembled nanowires have attracted much attention due to their potential applications in electronics and optoelectronics. A recent interest in Mn catalyzed GaAs nanowires are due to their potential use in spintronic devices at nanoscale. High densities of Au- and Mncatalyzed self-assembled GaAs nanowires (NWs) with diameter in the range of 20 to 200 nm and length of few microns were synthesized by molecular beam epitaxy (MBE) on different substrates at varied substrate temperatures. These nanowires were investigated by means of μ-Raman spectroscopy at room temperature. The Raman spectra from NWs show an energy downshift and a broadening of the LO and TO phonon lines that differ from those of epitaxial GaAs. We suggest that those downshift and broadening are due to the relaxation of the q=0 selection rule in the presence of structural defects in the nanowires. The results indicate that the use of Mn instead of Au as growth catalyst does not affect the structural quality of the nanowires drastically.

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