Lineshape analysis of Raman scattering from LO and SO phonons in III-V nanowires

Begum, Narjis; Bhatti, Arshad Saleem; Jabeen, Fauzia; Rubini, S.; Martelli, F.

doi:10.1063/1.3267488

Cited by 20 publications

(25 citation statements)

References 28 publications

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“…It has been showed that the shape (diameter 29 and cross section 30 ) of the nanowire, the surrounding medium, 31 and the defect density 32 of the nanowire influences the SO mode. Thus, the SO mode shifts to lower wave numbers when decreasing the diameter of the nanowire.…”

Section: Surface Optical Phonon In Inas Nanowiresmentioning

confidence: 99%

“…5, a third mode at the lowenergy side of the LO mode can be observed and is assigned to the SO mode of InAs nanowires due to the localization in one dimension. 32,33 A polarized Raman study on this mode reveals that it only appears in parallel configuration x(y,y)x where the incident and scattered light polarizations are perpendicular to the wire axis [ Fig. 7(b)].…”

Section: Surface Optical Phonon In Inas Nanowiresmentioning

confidence: 99%

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Polarized and resonant Raman spectroscopy on single InAs nanowires

et al. 2011

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We report polarized Raman scattering and resonant Raman scattering studies on single InAs nanowires. Polarized Raman experiments show that the highest scattering intensity is obtained when both the incident and analyzed light polarizations are perpendicular to the nanowire axis. InAs wurtzite optical modes are observed. The obtained wurtzite modes are consistent with the selection rules and also with the results of calculations using an extended rigid-ion model. Additional resonant Raman scattering experiments reveal a redshifted E 1 transition for InAs nanowires compared to the bulk zinc-blende InAs transition due to the dominance of the wurtzite phase in the nanowires. Ab initio calculations of the electronic band structure for wurtzite and zinc-blende InAs phases corroborate the observed values for the E 1 transitions.

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Section: Surface Optical Phonon In Inas Nanowiresmentioning

confidence: 99%

Section: Surface Optical Phonon In Inas Nanowiresmentioning

confidence: 99%

Polarized and resonant Raman spectroscopy on single InAs nanowires

et al. 2011

View full text Add to dashboard Cite

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“…[22][23][24][25] Although the SO phonon has been investigated for thin films and for nanowires, there is no systematic study revealing the direct comparison between the actual defect density to the phonon propagation constant. Here, we exploit the dependence of the SO frequency on the propagation constant of the phonon to correlate the spatial period of the oscillation along the nanowire axis with the defect characteristics of the nanowires studied by TEM.…”

Section: Introductionmentioning

confidence: 99%

Surface optical phonon propagation in defect modulated nanowires

Venkatesan

Mancabelli

Krogstrup

et al. 2017

Journal of Applied Physics

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Planar defects, such as stacking faults and twins, are the most common defects in III–V semiconductor nanowires. Here we report on the effect of surface perturbation caused by twin planes on surface optical (SO) phonon modes. Self-catalyzed GaAs nanowires with varying planar defect density were grown by molecular beam epitaxy and investigated by Raman spectroscopy and transmission electron microscopy (TEM). SO phonon peaks have been detected, and the corresponding spatial period along the nanowire axis were measured to be 1.47 μm (±0.47 μm) and 446 nm (±35 nm) for wires with twin densities of about 0.6 (±0.2) and 2.2 (±0.18) per micron. For the wires with extremely high density of twins, no SO phonon peaks were detected. TEM analysis of the wires reveal that the average distance between the defects are in good agreement with the SO phonon spatial period determined by Raman spectroscopy.

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“…Phonon confinement model (PCM) was applied to determine the correlation length of the LO phonon modes. 45 Raman intensity lineshape I(ω), is given by Eq. (6) using Gaussian confinement function for Wurtzite phases.…”

Section: Correlation Lengths Of Lo and So Raman Modesmentioning

confidence: 99%

The pronounced role of impurity phases in the optical properties of Mn catalyzed ZnS nanostructures

et al. 2015

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We report the effect of Mn self-doping in Mn catalyzed ZnS nanostructures grown via vapor liquid solid mechanism, which also resulted in the formation of additional impurity minority phases like ZnO and MnO 2 . The synthesized ZnS nanostructures were subsequently annealed in the range of 500 • C -700 • C in an inert environment to remove impurity phases and enhance the incorporation of dopant. Room temperature photoluminescence showed strong defect assisted luminescence. It was observed that green emission due to intrinsic defects of ZnS nanostructures was reduced in magnitude and Mn related orange/red luminescence increased in magnitude in nanostructures annealed at high temperature. The presence of impurity phases led to the observation of surface optical and interface phonon modes as observed in the Raman spectroscopy. Dielectric continuum and phonon confinement models were employed to determine the correlation lengths of the optical phonon modes. C 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. [http://dx

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Lineshape analysis of Raman scattering from LO and SO phonons in III-V nanowires

Cited by 20 publications

References 28 publications

Polarized and resonant Raman spectroscopy on single InAs nanowires

Polarized and resonant Raman spectroscopy on single InAs nanowires

Surface optical phonon propagation in defect modulated nanowires

The pronounced role of impurity phases in the optical properties of Mn catalyzed ZnS nanostructures

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