An ultrafast electro-optical amplified switch based on chip-on-carrier semiconductor optical amplifier with high optical contrast (33 dB) is presented. Switching times up to 115 ps with small overshoot were achieved by using the multi-impulse step injected current technique. These results are compared with previous preimpulse step injected current technique, and achieve a reduction of the inherent, post switching gain fluctuations without worsening the switching times. In addition, pulse formats for controlling such a kind of electro-optical switches are numerically analyzed and compared with experiments.

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The recovery of an optical carrier with the deletion of its amplitude modulation is introduced using a deeply saturated ultra-long semiconductor optical amplifier (UL-SOA). The experimental results were achieved for input signal bit rates up to 12.5 Gbps with high extinction ratio (up to 13.9 dB). The influence of parameters such as UL-SOA bias current, optical bandwidth, signal input power, modulation depth and bit rate are analyzed including the carrier spectral broadening effects due to the self-phase modulation effect.

A simple all-optical cross-gain modulation (XGM) wavelength conversion scheme based on a single semiconductor optical amplifier with higher regeneration capabilities is presented. A proof of concept was performed at data rates from 0.6 to 13.5 Gbps for NRZ streams using the KyaTera/FAPESP buried fiber optical testbed. Good results were obtained for large lambda-detuning (>10 nm), including conversion to the same wavelength. The best experiments achieved an improvement in the quality factor (Q-factor) over 4 units with input signals deteriorated by the standard fiber dispersion, with an extinction ratio penalty of 1.5 dB. In addition, the converter presented a small dependence with the relative optical input signal polarization (around 1 dB). Figure 1 All optical 2R-conversion scheme divided in blocks: single-SOA in counter-propagation mode ABSTRACT: A generalized method is presented to determine the resonant frequency of slot-loaded rectangular microstrip patch antenna by equating its area to an equivalent area of a rectangular microstrip patch antenna. The computed results are in good agreement with the reported simulated and measured results.

Optical carrier erasing is demonstrated with evaluation of further remodulation up to 12.5Gbps. Small impairments achieved for all but the 7G-7G and 12.5G-12.5G cases, when spurious-pattern noise force higher penalties (respectively 2.3dB and 0.7dB).

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