We present measurements of ferromagnet/superconductor _NiCu/NbN_ and plain superconducting _NbN_ nanostripes with the linewidth ranging from 150 to 300 nm. The NiCu _3 nm_/NbN _8 nm_bilayers, as compared to NbN _8 nm_, showed a up to six times increase in their critical current density, reaching at 4.2 K the values of 5.5 MAcm2 for a 150 nm wide nanostripe meander and 12.1 MAcm2 for a 300 nm one. We also observed six-time sensitivity enhancement when the 150 nm wide NiCu/NbN nanostripe was used as an optical detector. The strong critical current enhancement is explained by the vortex pinning strength and density increase in NiCu/NbN bilayers and confirmed by approximately tenfold increase in the vortex polarizability facto
A porous silicon layer (PSL) with pores of 40-200A diam was electrochemically treated at cathodic potentials in an aqueous KC1 solution. The treatment gave rise to the increase in proportion of silicon oxides. The surface had a porous structure of 0.5-2 t~m diam after the electrochemical treatment. A comparison study using He-Ne laser irradiation of the PSL was done that showed no distinct effects in the cathodic reaction rate compared with the electrochemical method. A surface-type humidity sensor was fabricated using the electrochemically treated silicon and found to be sensitive to changes in humidity over a wide range.
We present measurements of the electrical resistivity ρ(T ) on high-quality single-crystalline CeNiSn under both hydrostatic pressure up to 1 GPa and uniaxial pressure up to 0.25 GPa. At ambient pressure, ρ(T ) along the orthorhombic a-axis (b-axis) shows two maxima at T L = 12 K (14 K) and T H = 74 K (40 K), respectively, which arise from the Kondo scattering of conduction electrons by the crystal-field ground state and excited states. With increasing hydrostatic pressure, both T L and T H increase linearly, and for P 0.8 GPa, the anisotropy in ρ(T ) for I a and I b almost vanishes as a result of increased hybridization between the 4f electrons and the conduction electrons. Under P a, both T L and T H in ρ(I b) increase similarly to under hydrostatic pressure. Under P c, however, the depression of T L in ρ(I a) and ρ (I b) suggests that the c-f hybridization in the crystal-field ground state is weakened in the a-b plane of CeNiSn.
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