We report that superconducting YbBa2Cu3O7−x films are formed on Si(100) substrates using SrTiO3 films as buffer layers. SrTiO3 buffer layers are prepared on Si using a focused electron beam evaporation method, while YbBa2Cu3O7−x films are prepared using a dc arc discharge evaporation method. It has been shown that the SrTiO3 thin film is effective to transmit the crystalline information of a Si(100) substrate to the YbBa2Cu3O7−x film and to block the diffusion of Si atoms into the film. The highest Tc (zero) of the film was 73 K.
In-situ measurement of the transmittance change at 220 nm in synthetic silica glass under the ArF excimer laser irradiation showed three phenomenological stages: 1) initial coloring stage, 2) saturation stage where the coloring reaction equilibrates to the discoloring reaction and 3) heavy dosing stage where a rapid increase in photoabsorption occurs after an increase in the number of laser shots. The coloring rate at the initial stage depends only on the sum of the exposed laser power regardless of laser energy density, frequency and OH concentration. The concentration of OH in the glass reduces the photoabsorption at the saturation stage by increasing the extent of discoloring reaction while it scarcely influences on the number of shots at which the rapid photoabsorption occurs in the heavy-dose region.
We have statistically analyzed 28,800 cells of arrayed stacked gate transistors, and, for the first time, we discuss the effectiveness of NO and N20 nitridation in suppressing microscopic SILC (mSILC). We have found that NO nitridation is more effective in suppressing the mSILC than N20 nitridation and is very promising for the reduction of bit failures.
IntroductionThe continuous shrinkage of device dimensions below a quarter-micron requires highly reliable ultra-thin dielectric films. In this thickness range, not only breakdown but also wearout of dielectric films is one of the key technological issues. Thin nitrided oxide is a major candidate for such films due to its excellent immunity to electrical stress, such as suppression of stress-induced leakage current (SILC) [l]. In most studies, MOS capacitors of sizes on the order of square millimeters have tended to be used to observe the characteristics of the SILC, although the suppression of bit failures occurring at localized spots is becoming increasingly significant. We should focus on the effect of nitridation on suppressing mSILC observed in sizes on the order of square microns [2] to meet forthcoming scaling-down. In this paper, we show that nitridation using NO and N20 gases is effective in suppressing the mSILC by statistically analyzing 28,800 cells of arrayed stacked gate transistors [3], and discuss the dependence of the mSILC on the concentration and the chemical state of nitrogen incorporated at Sddielectric interfaces.
The life of synthetic silica glass under ArF excimer laser irradiation was
estimated in relation to the laser energy density by in-situ photoabsorption
measurements under exposure to more than 107 shots. Dissolved hydrogen
increases the life whereas OH in the glass scarcely influences it. Usual
photomask glass is found to be tolerable to more than 1011 shots at
0.1 mJ/cm2 of laser irradiation intensity.
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