As-grown Ba2YCu3O
x
thin films (\lesssim100 nm) have been prepared by rf magnetron sputtering deposited on Si(100) with buffer layers of YSZ and Y2O3/YSZ. Epitaxial growth of Ba2YCu3O
x
thin films is confirmed by ion channeling measurements along the (100) directions of the Si substrate showing a χmin of 60% on YSZ/Si, and 6% on Y2O3/YSZ/Si using 2.0 MeV He+. The as-grown films have critical current densities of 104 A/cm2 on YSZ/Si and 106 A/cm2 on Y2O3/YSZ/Si at 77 K. Our results indicate that the superconducting properties of the films are limited primarily by the value of lattice mismatch between the Ba2YCu3O
x
and buffer layers.
Using the silicon substrates patterned with the trench, the superconducting microbridge junction has been fabricated in as-grown Ba2YCu3O
x
thin films by rf magnetron sputtering. The microbridge junctions with constrictions as small as submicron dimensions were obtained. These microbridge junctions behaved as Josephson junctions and microwave-induced steps were observed. The observed characteristics seem to be consistent with those expected for a homogeneous wide superconducting bridge (constriction size≫coherence length).
Ultrathin Ba2YCu3O
x
films with thickness down to 7 nm were grown epitaxially on a Si(100) substrate using buffer layers (Y2O3(10 nm) and YSZ(40 nm)). These films show metallic behavior and full superconductivity through revealing broadened transitions. The critical current densities at 40 K are about 5×106 A/cm2 and 5×105 A/cm2 for 100 nm- and 28 nm-thick films, respectively.
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