BaTiO3 thin films were fabricated using an rf-magnetron sputtering technique and an oxide target. In spite of depositing on an amorphous fused quartz substrate, the preferentially oriented thin films were obtained without any post-annealing process. The preferred orientation of the thin films changed with sputtering gas pressure, gas composition and substrate temperature. At a lower gas pressure, the thin films crystallized well and preferentially oriented to the [100] direction. With increasing gas pressure, the preferred orientation changed to (110). On the other hand, at a lower substrate temperature or higher argon partial pressure, the preferred orientation changed to (111). The variation of the preferred orientation, lattice constant, and crystallite size with sputtering conditions was explained by assuming a thermal-vibration model.
The crystal structure of BaTiO3 thin films fabricated by RF-magnetron sputtering has been investigated. As-sputtered films exhibited a cubic structure with a small grain size of about 6-8nm. After annealing at a temperature above 1100•Ž, the crystal structure changed from cubic to tetragonal, because the annealing process caused grain growth. The critical grain size of the thin films which provided the cubic structure exist ed in the range of 0.1-0.2,ƒÊm. This value agreed well with the critical grain size of BaTiO3 fine particles, 0.12ƒÊm.
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