A new cell structure named ACT (Asymmetrical Contactless Transistor) is proposed for high density data storage applications which require low voltage, low power consumption and fast prograderase.The ACT cell with a lightly doped source and heavily doped drain realizes a simple virtual ground array using the Fowler-Nordheim (FN) tunneling mechanism for both program and erase. A selfaligned floating-gate wing technology is introduced to increase gate coupling ratio in wordline direction without sacrificing cell area. A cell area as small as 0 . 3 9~" with a coupling ratio of 0.55 is obtained using 0.3pm process technology.The low programming current of the ACT cell enables multiple programming to be used and thus it is possible to achieve fast programming (< lyshyte) with a low single supply voltage (< 3V). A good disturb immunity in program, erase and read modes is also obtained.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.