We present the fabrication of vertically aligned cobalt nanowire arrays on planar surfaces as well as preliminary field-emission (FE) experiments
using them as cold electron cathodes. These arrays are obtained by electrodeposition into nanoporous templates on Au/Ti/Si substrates at
very low temperature (<100 °C). After the removal of the template, the arrays consist of statistically positioned vertical free-standing nanowires
with high aspect ratios, uniform dimensions, and predetermined densities. The electron field-emission measurements show metallic and
reproducible characteristics. Emission is found to be reasonably homogeneous over the whole sample area, and a current density of 1
mA/cm2 has been obtained. We show that the growth process permits us to predetermine the field amplification factor precisely, which is of
primary importance for FE sources. A large variety of FE applications can be envisaged, including FE displays and microwave amplifiers.
In order to assess possible mechanisms of gate reverse-bias leakage current in AlInN/GaN high electron mobility transistors (HEMTs) grown by metalorganic chemical-vapor deposition on SiC substrates, temperature-dependent current-voltage measurements combined with Fourier transform current deep level transient spectroscopy (FT-CDLTS) are performed in the temperature range of 200–400 K. In this range of temperature reverse-bias leakage current flow is found to be dominated by Poole–Frenkel emission. Based on CDLTS measurements, a model of leakage current transport via a trap state located at the AlInN/metal interface with an activation energy of 0.37 eV is suggested. The trap nature is shown to be an extended trap, most probably associated with dislocations in the AlInN barrier layer.
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