AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

Sarazin, N.; Morvan, E.; Poisson, M.A.; Oualli, M.; Gaquière, C.; Jardel, Olivier; Drisse, O.; Tordjman, M.; Magis, M.; Delage, S.

doi:10.1109/led.2009.2035145

Cited by 109 publications

(52 citation statements)

References 9 publications

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“…As for the results presented in this paper, one can notice lower performances than those published in [3]. This limitation is due to a deliberate restriction imposed on the gain compression level, in order to evaluate the devices for power amplifiers perspectives (i.e.…”

Section: B) Cw Measurements At 10 Ghzmentioning

confidence: 81%

“…Load-pull measurements in cw performed on wafer A were presented in [3], and a record performance of 10.3 W/mm with 51% of PAE has been obtained at V ds ¼ 30 V for 4 × 75 mm devices in class AB. In AlGaN/GaN devices processed in the laboratory, a saturation of f t was observed and 0.15 mm gates did not outdo 0.25 mm gates.…”

Section: B) Cw Measurements At 10 Ghzmentioning

confidence: 99%

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Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

Jardel

Callet

Dufraisse

et al. 2011

Int. J. Microw. Wireless Technol.

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A study of the electrical performances of AlInN/GaN High Electron Mobility Transistors (HEMTs) on SiC substrates is presented in this paper. Four different wafers with different technological and epitaxial processes were characterized. Thanks to intensive characterizations as pulsed-IV, [S]-parameters, and load-pull measurements from S to Ku bands, it is demonstrated here that AlInN/GaN HEMTs show excellent power performances and constitute a particularly interesting alternative to AlGaN/GaN HEMTs, especially for high-frequency applications beyond the X band. The measured transistors with 250 nm gate lengths from different wafers delivered in continuous wave (cw): 10.8 W/mm with 60% associated power added efficiency (PAE) at 3,5 GHz, 6.6 W/mm with 39% associated PAE at 10.24 GHz, and 4.2 W/mm with 43% associated PAE at 18 GHz.

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Section: B) Cw Measurements At 10 Ghzmentioning

confidence: 81%

Section: B) Cw Measurements At 10 Ghzmentioning

confidence: 99%

Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

Jardel

Callet

Dufraisse

et al. 2011

Int. J. Microw. Wireless Technol.

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“…Most HEMTs are grown on sapphire [4][5][6], silicon [7][8][9], or SiC [10][11][12] substrates. SiC substrates are presently the best choice for epitaxial growth because of their excellent crystal quality and have been used in devices with the highest output power densities.…”

Section: Introductionmentioning

confidence: 99%

Optimization of Ohmic Contact Metallization Process for AlGaN/GaN High Electron Mobility Transistor

Cho¹,

Kim²

2013

Transactions on Electrical and Electronic Materials

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In this paper, a manufacturing process was developed for fabricating high-quality AlGaN/GaN high electron mobility transistors (HEMTs) on silicon carbide (SiC) substrates. Various conditions and processing methods regarding the ohmic contact and pre-metal-deposition BCl 3 etching processes were evaluated in terms of the device performance. In order to obtain a good ohmic contact performance, we tested a Ti/Al/Ta/Au ohmic contact metallization scheme under different rapid thermal annealing (RTA) temperature and time. A BCl 3 -based reactive-ion etching (RIE) method was performed before the ohmic metallization, since this approach was shown to produce a better ohmic contact compared to the as-fabricated HEMTs. A HEMT with a 0.5 μm gate length was fabricated using this novel manufacturing process, which exhibits a maximum drain current density of 720 mA/mm and a peak transconductance of 235 mS/mm. The X-band output power density was 6.4 W/mm with a 53% power added efficiency (PAE).

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“…Specifically, thin barriers below 10 nm thickness are difficult to realize for sufficient sheet electron densities, and channel conductivity is limited [2]. Therefore, there has been significant effort to implement the alternative barrier material InAlN instead of AlGaN [3,4]. At an InN mole fraction around 18 %, InAlN is lattice-matched to GaN and enables transistor structures with higher sheet electron density and thinner barriers than it is possible with AlGaNbarriers.…”

mentioning

confidence: 99%

Quaternary barriers for improved performance of GaN‐based HEMTs

Lim

Aidam

Waltereit

et al. 2011

Phys. Status Solidi C

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Nearly lattice-matched InAlGaN-barriers for GaN-based high electron mobility transistors (HEMTs) have been grown by molecular beam epitaxy (MBE). Hall measurements reveal a sheet carrier density of 1.9 × 1013 cm-2 and a mobility of 1590 cm2/Vs. HEMTs have been processed from both InAlGaN-barrier and conventional AlGaN-barrier heterostructures. The devices with quaternary barrier show advantages in both DC and RF characteristics including a HEMT with 150 nm gate length, a current density of 2.3 A/mm and a peak transconductance of 675 mS/mm (Lim et al., IEEE Electron Device Lett. 31, 671 (2010) [1]). On the other hand, the transistors with ternary barrier exhibit significantly better pinch-off behaviour and lower gate leakage currents. These issues have been successfully addressed in a second process run by improving the MBE growth of InAlGaN and by adding a GaN cap layer to the HEMT heterostructure

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AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

Cited by 109 publications

References 9 publications

Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

Optimization of Ohmic Contact Metallization Process for AlGaN/GaN High Electron Mobility Transistor

Quaternary barriers for improved performance of GaN‐based HEMTs

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