The investigation by the Monte-Carlo method of the growth of the silicon epitaxial film at a chloride CVD system has allowed t o find out the composition of adsorption layer, the micromechanism of the reactions of Si atoms building-in into the growing crystalline layer and the growth conditions influence on the growth rate and film surface roughness. The change of adsorptive layer composition in the system SiC1,-HCl-H, (fraction of adaatoms, silicon atoms built-in a crystal and molecules SiCl,) depending on temperature has been determined. The change of silicon film growth rate depending on temperature and concentration change of SiH,CI, has been established and the contribution of growth mechanism (with participation of adatom, silicon atoms and molecules Sic],) into the total rate of film growth has been shown.
Dedicated to Prof. Dr. Dr. h. c. Dr. E. h. 1'. GORLICH on the occasion of his 80th birthdayThe factors are studied that cause a decrease in the temperature of epitaxial film growth during the deposition from a n ionized molecular beam. A simulation technique allows for a local increase of the substrate temperature on the site of atom attachment, its decrease by heat removal, and influence on the frequency of diffused junctions of adatoms along the substrate. Silicon condensation illustrates the local heating of the substrate by about 500 K with a cooling time of = s, which provides the formation of a monocrystalline film. The influence is investigated of siipersaturation on the growth rate of a film and its perfection and a possible decrease of the activation energy of the surface diffusion of adatoms and their incorporation into the crystal is estimated.
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