Study of the peculiarities of film growth from molecular beams by the method of simulation

Abstract

Dedicated to Prof. Dr. Dr. h. c. Dr. E. h. 1'. GORLICH on the occasion of his 80th birthdayThe factors are studied that cause a decrease in the temperature of epitaxial film growth during the deposition from a n ionized molecular beam. A simulation technique allows for a local increase of the substrate temperature on the site of atom attachment, its decrease by heat removal, and influence on the frequency of diffused junctions of adatoms along the substrate. Silicon condensation illustrates the local heating of the substrate by about 500 K with a cooling time of = s, which provides the formation of a monocrystalline film. The influence is investigated of siipersaturation on the growth rate of a film and its perfection and a possible decrease of the activation energy of the surface diffusion of adatoms and their incorporation into the crystal is estimated.