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We investigate the structural and quantum transport properties of isotopically enriched 28 Si/ 28 SiO 2 stacks deposited on 300-mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92%. Hall-bar transistors with an oxide stack comprising 10 nm of 28 SiO 2 and 17 nm of Al 2 O 3 (equivalent oxide thickness of 17 nm) are fabricated in an academic cleanroom. A critical density for conduction of 1.75 × 10 11 cm −2 and a peak mobility of 9800 cm 2 /Vs are measured at a temperature of 1.7 K. The 28 Si/ 28 SiO 2 interface is characterized by a roughness of = 0.4 nm and a correlation length of = 3.4 nm. An upper bound for valley splitting energy of 480 μeV is estimated at an effective electric field of 9.5 MV/m. These results support the use of wafer-scale 28 Si/ 28 SiO 2 as a promising material platform to manufacture industrial spin qubits.

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