Comparison of Junctionless and Conventional Trigate Transistors With $L_{g}$ Down to 26 nm

Rios, R.; Cappellani, A.; Armstrong, M.; Budrevich, A.; Gomez, Hector; Pai, Rajaram A.; Rahhal-orabi, N.; Kuhn, Kelin J.

doi:10.1109/led.2011.2158978

Cited by 292 publications

(116 citation statements)

References 4 publications

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“…However, the short channel effect is exacerbated as the channel length decreases. Three-dimensional (3-D) multi-gate structures, such as double-gate, tri-gate, and gate-all-around (GAA) structures, have been proposed to improve gate controllability and protect against the short-channel effects of nanoscale transistors [17][18][19][20][21][22][23][24]. Therefore, a tri-gate fin-like structure with a channel length (L) of 0.2 µm was employed in this study.…”

Section: Introductionmentioning

confidence: 99%

Improving the Gate-Induced Drain Leakage and On-State Current of Fin-Like Thin Film Transistors with a Wide Drain

Zeng

Chen

2018

Applied Sciences

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Polycrystalline silicon (poly-Si) thin film transistors (TFT) with a tri-gate fin-like structure and wide drain were designed and simulated to improve gate-induced drain leakage (GIDL), ON-state current, and breakdown voltage. The GIDL of fin-like TFTs (FinTFTs) examined in this study was dominated by longitudinal band-to-band tunneling (L-BTBT). Extending the wide drain can effectively suppress the longitudinal electric field near the drain and improve L-BTBT GIDL and breakdown. In addition, a wider drain can lead to a large cross section in the current path and improve the ON-state current. FinTFTs with wide drain exhibit a low GIDL, a high ON-state current, and high breakdown voltage, while maintaining favorable gate controllability.

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Section: Introductionmentioning

confidence: 99%

Improving the Gate-Induced Drain Leakage and On-State Current of Fin-Like Thin Film Transistors with a Wide Drain

Zeng

Chen

2018

Applied Sciences

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“…Thus, the junctionless transistor (JLT) without counter-doped metallurgical junctions has been proposed [5][6][7][8][9]. In comparison with the conventional MOSFETs, the JLT features a single-doping species at the same concentration in its source, drain, and channel.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, a comparison study between fabricated JL FinFET and conventional bulk FinFET with L g of 26 nm has already been performed [7]. It made a comparison between the two devices in views of the channel mobility, the gate capacitance, and short-channel characteristics.…”

Section: Introductionmentioning

confidence: 99%

Design and Analysis of Sub-10 nm Junctionless Fin-Shaped Field-Effect Transistors

Kim¹,

Seo²,

Yoon³

et al. 2014

JSTS:Journal of Semiconductor Technology and Science

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Abstract-We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulktype fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width (W fin ) and height (H fin ) of the fin as well as the channel doping concentration (N ch ). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET.Index Terms-Junctionless, fin-shaped field-effect transistor (FinFET), short-channel effect (SCE), 3-D device simulation

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“…Besides that JL transistor avoids junction problems, it has many advantages such as reduced electric field perpendicular to current flow, low subthreshold slope, less NBTI and hot carrier induced device degradation [3,4]. However, a recent study indicated that JL transistors have reduced gate control and degraded short channel characteristics [5]. The device characterizations of JL transistors including the current voltage model, low temperature conductance oscillation, and noise properties have been reported [6,7].…”

Section: Introductionmentioning

confidence: 99%

Drain breakdown voltage: A comparison between junctionless and inversion mode p-channel MOSFETs

Lee¹,

Yu²,

Jeong³

et al. 2012

Microelectronics Reliability

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Comparison of Junctionless and Conventional Trigate Transistors With $L_{g}$ Down to 26 nm

Cited by 292 publications

References 4 publications

Improving the Gate-Induced Drain Leakage and On-State Current of Fin-Like Thin Film Transistors with a Wide Drain

Improving the Gate-Induced Drain Leakage and On-State Current of Fin-Like Thin Film Transistors with a Wide Drain

Design and Analysis of Sub-10 nm Junctionless Fin-Shaped Field-Effect Transistors

Drain breakdown voltage: A comparison between junctionless and inversion mode p-channel MOSFETs

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