We report on the photoluminescence properties and the hydrogen depth distributions of plasma treated GaAs/AlGaAs multiple quantum well (MQW) structures. Specimens grown by molecular beam epitaxy were exposed to a deuterium plasma under different temperature-time conditions. Photoluminescence measurements were made at 4.2 K, using low and high excitation powers, on the hydrogenated samples and on untreated partners. A decrease in the linewidth of the free exciton and an increase in the peak intensity were observed in specimens following plasma treatment. In general, each of the hydrogenated MQW specimens displayed an increase in luminescence efficiency and a diminution of impurity-related peaks after hydrogenation. Secondary ion mass spectrometry measurements yielded depth distributions for 2H and Al atoms. In samples having the best luminescence, the 2H was nearly constant throughout the MQW region, at about 1018 cm−3.
Uniaxial stress and Zeeman spectroscopy experiments on the no-phonon luminescence at 0.793 eV from Si: Au confirm the hypothesis of a transition from shallow "hydrogen-like'' levels towards the deep donor level. The initial states are the split valley-orbit 1s: (2T2 + *E). The experimental results suggest a D2d symmetry group or one of its subgroups.Untersuchungen bei uniaxialer Spannung und Zeeman-Spektroskopie der Null-Phonon-Lumineszenz bei 0,793 eV von Si: Au bestiitigen die Hypothese eines ubergangs von flachen ,,wasserstoffiihnlichen" Niveaus zu einem Niveau eines tiefen Donators. Die Ausgangszustinde sind die aufgespaltenen Tal-Bahn-1s-Zustande : (2T2 + 2E). Die experimentellen Ergebnisse weisen auf eine Dza-Symmetriegruppe oder auf eine ihrer Untergruppen hin.
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