Characterization of hydrogenated GaAs/AlGaAs multiple quantum well structures

Abstract

We report on the photoluminescence properties and the hydrogen depth distributions of plasma treated GaAs/AlGaAs multiple quantum well (MQW) structures. Specimens grown by molecular beam epitaxy were exposed to a deuterium plasma under different temperature-time conditions. Photoluminescence measurements were made at 4.2 K, using low and high excitation powers, on the hydrogenated samples and on untreated partners. A decrease in the linewidth of the free exciton and an increase in the peak intensity were observed in specimens following plasma treatment. In general, each of the hydrogenated MQW specimens displayed an increase in luminescence efficiency and a diminution of impurity-related peaks after hydrogenation. Secondary ion mass spectrometry measurements yielded depth distributions for 2H and Al atoms. In samples having the best luminescence, the 2H was nearly constant throughout the MQW region, at about 1018 cm−3.

Hydrogen Passivation of Shallow Dopants in InP Studied by Photoluminescence Spectroscopy

“…al. [7]. In our sample, this band does not show any variation in peak position with excitation intensity and could not be involving any prominent D-A pair transition.…”

“…After hydrogenation, D-V transition becomes dominant due to acceptor passivation. In an earlier work by Swaminathan and co workers [7], a new near band edge peak was observed which was attributed to hydrogenation induced damage. We observe such a peak in InP : Zn samples and explain it as the D-A pair transition which becomes observable following acceptor passivation by hydrogen.…”

“…Hydrogen passivation of deep levels accompanied by an increase in Pt-was observed in n-GaAs [4]. Swaminathan, et al [7] have observed a PL rise in p-InP after hydrogenation. In this paper, we report the effect of hydrogenation on the PL of InP : Mg, InP : Zn and undoped n-InP.…”

“…Hydrogen containing plasma has been used widely for rI-V material processing [6]. Hydrogen passivation of non-radiative defect centers in the semiconductor bulk [7] and at interfaces of quantum wells [8,9] have also been reported. Photoluminescence (PL) spectroscopy has been used to study the passivation effects of hydrogenation.…”

Effect of hydrogen on modulation-doped AlGaAs/InGaAs/GaAs heterostructures: a photoluminescence study

“…It is well known that hydrogen in bulk samples as well as in quantum well (QW) structures saturate the dangling bond, passivates both shallow dopants and deep centers by forming hydrogen impurity complexes [1][2][3][4][5][6][7]. Gal et al [8] observed the neutralization of interface defects caused by misfit dislocations, in partially relaxed In y Ga 1Ky As/GaAs heterostructures by hydrogen plasma.…”