The spin-orbit coupling is studied experimentally in two PbTe quantum wells by means of weak antilocalization effect. Using the Hikami-Larkin-Nagaoka model through a computational global optimization procedure, we extracted the spin-orbit and inelastic scattering times and estimated the strength of the zero field spin-splitting energy Δso. The values of Δso are linearly dependent on the Fermi wave vector (kF) confirming theoretical predictions of the existence of large spin-orbit coupling in IV-VI quantum wells originated from pure Rashba effect.
Epilayers of Sn1−xEuxTe (0 < x < 0.03) were grown by molecular beam epitaxy on freshly cleaved BaF 2 (111) substrates and their structural, electrical and optical properties were investigated. The thicknesses of epilayers were about 1.5 µm and deposition was carried out at growth temperatures of 300 o C. The structural properties were investigated by high resolution X-ray diffraction and a sharp film degradation could be observed with increasing europium content. Electrical measurements with temperature varying from 300 to 10K indicated that the epilayers present carrier concentration ranging between 3 × 10 20 and 6 × 10 20 cmand a low resistivity from 6.3 × 10 −5 to 1.2 × 10 −4Ω.cm. From optical measurements it could be seen that spectra present a low energy edge corresponding to the beginning of intra band excitations and the high energy edge due to inter band excitations.
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