Abstract:Epilayers of Sn1−xEuxTe (0 < x < 0.03) were grown by molecular beam epitaxy on freshly cleaved BaF 2 (111) substrates and their structural, electrical and optical properties were investigated. The thicknesses of epilayers were about 1.5 µm and deposition was carried out at growth temperatures of 300 o C. The structural properties were investigated by high resolution X-ray diffraction and a sharp film degradation could be observed with increasing europium content. Electrical measurements with temperature varyin… Show more
“…The patterns can be indexed in the cubic NaCl‐type structure, space group Fm‐3m , with no indication of the existence of a second phase. The calculated lattice parameter, a , of AgSn m SbTe m+2 increases with increasing m value consistent with the difference between the lattice parameter of SnTe (6.30 Å)15 and AgSbTe 2 (6.08 Å)16 (see Figure 1b). The melting points of the AgSn m SbTe m+2 samples determined by differential thermal analysis (DTA) are high, >1000 K (see Figure ).…”
Section: Resultssupporting
confidence: 77%
“…Given that, in the related material, TEM of Ag 0.85 SnSb 1. 15 Te 3 revealed extensive nanostructuring, [18] it is not unreasonable to anticipate similar behavior in AgSn m SbTe m+2 . Such an investigation goes beyond the scope of the present study and will be reported in the future.…”
“…The patterns can be indexed in the cubic NaCl‐type structure, space group Fm‐3m , with no indication of the existence of a second phase. The calculated lattice parameter, a , of AgSn m SbTe m+2 increases with increasing m value consistent with the difference between the lattice parameter of SnTe (6.30 Å)15 and AgSbTe 2 (6.08 Å)16 (see Figure 1b). The melting points of the AgSn m SbTe m+2 samples determined by differential thermal analysis (DTA) are high, >1000 K (see Figure ).…”
Section: Resultssupporting
confidence: 77%
“…Given that, in the related material, TEM of Ag 0.85 SnSb 1. 15 Te 3 revealed extensive nanostructuring, [18] it is not unreasonable to anticipate similar behavior in AgSn m SbTe m+2 . Such an investigation goes beyond the scope of the present study and will be reported in the future.…”
“…8,9 There are some reports on the SnEuTe ternally alloy and EuTe/SnTe SL. [10][11][12] However, reduction in the carrier concentration has never been reported for this system. Thus, it is considered that the insertion of Eu strongly reduced the number of Sn vacancies in the SnTe layer, leading to the reduction in hole concentration and a drastic increase in hole mobility.…”
SnTe-based films and superlattices (SLs) were prepared and their electrical properties were measured. A EuTe/SnTe SL exhibited a hole mobility of 2720 cm2/V s, which is the highest value reported for any semiconductor material at room temperature. The SnEuTe film also exhibited high hole mobility in contrast to the PbEuTe system. These properties are explained in terms of the band offsets of EuTe/SnTe heterojunction and a decrease in the number of Sn vacancies. In addition, SnTe/PbSe and SnTe/PbS SLs with thin SnTe layers displayed n-type conduction with Seebeck coefficients comparable to those for PbSe and PbS. These properties reflect the type II heterostructures.
“…For the preparation of the EuTe films, two individual cells were used as Eu and Te 2 beam source and the growth rate was kept constant at ϳ1.3 Å / s. The EuTe͑111͒ epitaxial layers were grown at 175°C. The growth conditions have to be precisely controlled in order to obtain high quality and smooth EuTe epitaxial films grown in a two-dimensional layer-by-layer mode, 25 since the EuTe͑111͒ surface has a very strong tendency to a three-dimensional growth mode. 26 After the EuTe growth, the samples were transferred to a second MBE system and the Fe and the protective Cu layers were grown at room temperature.…”
We report on the investigation of the exchange bias effect in Fe layers on EuTe͑111͒, an antiferromagnetic semiconductor. For this ferromagnet ͑FM͒/semiconducting antiferromagnet ͑AFM͒ exchange bias system, we have found positive and negative exchange bias effect ͑EB͒. Fresh samples exhibit positive EB, independently of the applied cooling field, indicating antiferromagnetic coupling between the FM and the AFM layers at the Fe/EuTe͑111͒ interface. The change in EB with time, from positive EB for fresh samples to negative EB after short time,is attributed to aging effects at the Fe/EuTe interface.
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