Abstract:SnTe-based films and superlattices (SLs) were prepared and their electrical properties were measured. A EuTe/SnTe SL exhibited a hole mobility of 2720 cm2/V s, which is the highest value reported for any semiconductor material at room temperature. The SnEuTe film also exhibited high hole mobility in contrast to the PbEuTe system. These properties are explained in terms of the band offsets of EuTe/SnTe heterojunction and a decrease in the number of Sn vacancies. In addition, SnTe/PbSe and SnTe/PbS SLs with thin… Show more
“…189) In particular, a two-step method in which the depositions of the first layer and subsequent layers are done at different temperatures, to promote initial adhesion and crystallization separately, has been reported to yield best quality films. 173,182,183,188,189) For the TCI material SnTe, a technique called hot-wall epitaxy has been used in the past, 196) yielding good quality samples with a reasonably high mobility ($2700 cm 2 V À1 s À1 ). For SnTe which is a cubic material with rock-salt structure, good lattice matching is crucial for epitaxial growth.…”
Topological insulators represent a new quantum state of matter which is characterized by peculiar edge or surface states that show up due to a topological character of the bulk wave functions. This review presents a pedagogical account on topological insulator materials with an emphasis on basic theory and materials properties. After presenting a historical perspective and basic theories of topological insulators, it discusses all the topological insulator materials discovered as of May 2013, with some illustrative descriptions of the developments in materials discoveries in which the author was involved. A summary is given for possible ways to confirm the topological nature in a candidate material. Various synthesis techniques as well as the defect chemistry that are important for realizing bulk-insulating samples are discussed. Characteristic properties of topological insulators are discussed with an emphasis on transport properties. In particular, the Dirac fermion physics and the resulting peculiar quantum oscillation patterns are discussed in detail. It is emphasized that proper analyses of quantum oscillations make it possible to unambiguously identify surface Dirac fermions through transport measurements. The prospects of topological insulator materials for elucidating novel quantum phenomena that await discovery conclude the review.
“…189) In particular, a two-step method in which the depositions of the first layer and subsequent layers are done at different temperatures, to promote initial adhesion and crystallization separately, has been reported to yield best quality films. 173,182,183,188,189) For the TCI material SnTe, a technique called hot-wall epitaxy has been used in the past, 196) yielding good quality samples with a reasonably high mobility ($2700 cm 2 V À1 s À1 ). For SnTe which is a cubic material with rock-salt structure, good lattice matching is crucial for epitaxial growth.…”
Topological insulators represent a new quantum state of matter which is characterized by peculiar edge or surface states that show up due to a topological character of the bulk wave functions. This review presents a pedagogical account on topological insulator materials with an emphasis on basic theory and materials properties. After presenting a historical perspective and basic theories of topological insulators, it discusses all the topological insulator materials discovered as of May 2013, with some illustrative descriptions of the developments in materials discoveries in which the author was involved. A summary is given for possible ways to confirm the topological nature in a candidate material. Various synthesis techniques as well as the defect chemistry that are important for realizing bulk-insulating samples are discussed. Characteristic properties of topological insulators are discussed with an emphasis on transport properties. In particular, the Dirac fermion physics and the resulting peculiar quantum oscillation patterns are discussed in detail. It is emphasized that proper analyses of quantum oscillations make it possible to unambiguously identify surface Dirac fermions through transport measurements. The prospects of topological insulator materials for elucidating novel quantum phenomena that await discovery conclude the review.
“…In recent years SnTe thin films doped with Mn have received some attention from experimentalists interested in studying the possibility of ferromagnetic/antiferromagnetic order or spin-glass phase in these materials, and anomalous Hall effect [1][2][3][4][5]. Recently SnTe-based superlattices were found to show a hole mobility of 2720 cm 2 /V s, which is among the highest values for any semiconductor material at room temperature reported so far [6].…”
“…2(a) intersects the bulk valence band due to the p-type Sn vacancy as the dominant dopant in SnTe [32][33][34]. It is therefore difficult to access the Dirac point of the topological surface states of SnTe in the ARPES measurement [15,16,18,20].…”
The surface of a topological crystalline insulator (TCI) carries an even number of Dirac cones protected by crystalline symmetry. We epitaxially grew high-quality Pb 1−x Sn x Teð111Þ films and investigated the TCI phase by in situ angle-resolved photoemission spectroscopy. Pb 1−x Sn x Teð111Þ films undergo a topological phase transition from a trivial insulator to TCI via increasing the Sn/Pb ratio, accompanied by a crossover from n-type to p-type doping. In addition, a hybridization gap is opened in the surface states when the thickness of the film is reduced to the two-dimensional limit. The work demonstrates an approach to manipulating the topological properties of TCI, which is of importance for future fundamental research and applications based on TCI.
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