The thermal quenching or plastic strain of RbCI, KC1, and KBr crystals leads to an increase in the number of associations of anion and cation vacancies. Using the methods of VUV spectroscopy, electronic excitations localized near divacancies are detected at 5 K. The process of radiative and nonradiative decay of these excitations is studied as well as the process of radiational creation of divacancies.

The spectra of the creation of long-lived Frenkel defects (F, H and a, I pairs) by 7.5 to 9.0 eV photons and the thermal annealing of defects created a t exciton decay or a t the recombination of electrons with holes are measured in KC1 crystals by the luminescence methods at 4.2 K. Pairs of defects with various distances between F and H centers are formed a t the decay of I ' (1/2) and r (3/2) excitons with ~t = 1. 2. The generation efficiency of long-lived a, I pairs is especially high at the tunneling recharge of F, H pairs created via the decay of r (3/2) excitons. rieneBcmx ne@eKToB (F, H-M a, I-nap) @oToHaMM 7,5 no 9,0 eV, a TaKxe o T x m ne@eli-TOB, C O~J I~H H M X nptl pacnane BHCHTOHOB M peKOM6MHaIUiM 3JIeIiTpOHOB M ~H P O K . IIapM nan e BKCMTOHOB I? (1/2) II r (3/2) c n = 1 , 2 . AonrommByIume a,

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