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A detailed study of the optical properties of InGaAs-lnP single quantum wells (aws) grown by atmospheric-pressure metal-organic chemical vapour deposition is described. Photoluminescence (PL), photoluminescence excitation (PLE), photoconductivity (PC) and electroreflectance (ER) are employed to study both undoped and modulation-doped quantum wells. The role of extrinsic processes in determining the low-temperature PL spectra is demonstrated from the variation of peak position and linewidth with temperature. The best PL linewidth obtained for a 1 5 0 A well is 5.3 meV, fairly close to the limit imposed by alloy fluctuations in the InGaAs. The role of free carriers in the undoped aws in determining the energy threshold for optical absorption is demonstrated from a comparison of PLE and PC spectra. Lineshape fitting of the PL spectra is described, and it is deduced that at 160 K recombination processes in both doped and undoped aws proceed with wavevector conservation, although at lower temperatures highly anomalous lineshapes are found in modulation-doped samples. The observation of a threshold in PC spectra under forward bias is interpreted as a transition from the valence-band well to the top of the conduction well. The ratio of the conduction-to valence-band discontinuities is deduced to be approximately 0.4 :0.6.

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In this review article, we describe the use of the Hall effect in the characterisation of Ill-V semiconductor layers. The theoretical framework is entirely analytic and we show that this is not an impediment to obtaining useful quantitative data concerning the electrically active impurities present in a layer. The method is illustrated mainly in indium phosphide but gallium arsenide and other materials are discussed also. Comparison with numerical data is made where appropriate.