Parallel conduction in GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As modulation doped heterojunctions

Kane, Michael J.; Apsley, N.; Anderson, David; Taylor, L. L.; Kerr, T. M.

doi:10.1088/0022-3719/18/29/013

Cited by 132 publications

(50 citation statements)

References 6 publications

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“…The temperature behavior of the Hall density and mobility can be understood in terms of two parallel conducting channels, i.e., QWs and barriers where relative densities and mobilities change with temperature. 30 The measured Hall carrier density and mobility are given by…”

Section: Methodsmentioning

confidence: 99%

Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells

Sun

Balkan

2009

Journal of Applied Physics

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We present the studies of energy and momentum relaxation dynamics of nonequilibrium holes in GaxIn1−xNyAs1−y/GaAs quantum well modulation doped with Be. Experimental results show that the real-space transfer (RST) of hot holes occurs via thermionic emission from the high-mobility GaInNAs quantum wells into the low-mobility GaAs barriers at a threshold electric field of F∼6 kV/cm at T=13 K. At this field the hole drift velocity saturates at vd∼1×107 cm/s. A slight increase in the field above the threshold leads to the impact ionization of acceptors in the barriers by the nonequilibrium holes. We observe and model theoretically a negative differential mobility effect induced by RST that occurs at an electric field of F∼7 kV/cm. The observed current surge at electric fields above 7 kV/cm is attributed to the hole multiplication induced by shallow impurity breakdown in the GaAs barrier and impact ionization in the high-field domain regime associated with the packet of RST of holes in the well.

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Section: Methodsmentioning

confidence: 99%

Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells

Sun

Balkan

2009

Journal of Applied Physics

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“…With the QMSA method, one can easily extract the mobilities and densities of individual electron and holes in bulk semiconductor materials and heterostructures [25,26]. This method is shown to be superior to other methods such as the two-carrier fit, multi carrier fit, and mobility spectrum analysis methods [27][28][29][30]. The analysis details are listed in our previous work for AlGaN/GaN based systems [31].…”

Section: Resultsmentioning

confidence: 99%

DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content

Li̇şesi̇vdi̇n

Altuntaş

Yıldız

et al. 2009

Superlattices and Microstructures

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a b s t r a c tExperimental Hall data that were carried out as a function of temperature (60-350 K) and magnetic field (0-1.4 T) were presented for Si-doped low Al content (x = 0.14) n-Al x Ga 1−x As/GaAs heterostructures that were grown by molecular beam epitaxy (MBE). A 2-dimensional electron gas (2DEG) conduction channel and a bulk conduction channel were founded after implementing quantitative mobility spectrum analysis (QMSA) on the magnetic field dependent Hall data. An important decrease in 2DEG carrier density was observed with increasing temperature. The relationship between the bulk carriers and 2DEG carriers was investigated with 1D self consistent Schrödinger-Poisson simulations. The decrement in the 2DEG carrier density was related to the DX-center carrier trapping. With the simulation data that are not included in the effects of DXcenters, 17 meV of effective barrier height between AlGaAs/GaAs layers was found for high temperatures (T > 300 K). With the QMSA extracted values that are influenced by DX-centers, 166 meV of the DX-center activation energy value were founded at the same temperatures.

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“…The presence of these two conductance channels enabled us to monitor the process of degradation both in the quantum well and in the barrier. To analyze the contribution of 2D high mobility and parallel low mobility channels we assumed that both conductance channels are in intimate contact and therefore see the same electrical field [17].…”

Section: Resultsmentioning

confidence: 99%

Effect of hydrostatic pressure on degradation of CdTe/CdMgTe heterostructures grown by molecular beam epitaxy on GaAs substrates

Wasik

Baj

Siwiec-Matuszyk

et al. 2001

Journal of Applied Physics

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We have shown that external hydrostatic pressure leads to the creation of structural defects, mainly in the vicinity of the II-VI/GaAs interface in the CdTe/Cd 1-x Mg x Te heterostructures grown by the molecular beam epitaxy method on GaAs substrates.These defects propagating across the epilayer cause permanent damage to the samples from the point of view of their electrical properties. In contrast, photoluminescence spectra are only weakly influenced by pressure. Our results shed light on the degradation process observed even without pressure in II-VI -based heterostructures.2

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Parallel conduction in GaAs/Al_xGa_1-xAs modulation doped heterojunctions

Cited by 132 publications

References 6 publications

Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells

Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells

DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content

Effect of hydrostatic pressure on degradation of CdTe/CdMgTe heterostructures grown by molecular beam epitaxy on GaAs substrates

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Parallel conduction in GaAs/AlxGa1-xAs modulation doped heterojunctions

Cited by 132 publications

References 6 publications

Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells

Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells

DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content

Effect of hydrostatic pressure on degradation of CdTe/CdMgTe heterostructures grown by molecular beam epitaxy on GaAs substrates

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Parallel conduction in GaAs/Al_xGa_1-xAs modulation doped heterojunctions