The modified surface layers of the Cd1-xMnxTe crystals were obtained by the laser recrystallization of the crystal surface with the use of millisecond and nanosecond ruby lasers. The determination and diagnostics of the layer structural state were performed by the study the electron channeling patterns in the SEM. The AFM studies showed that mechanically stable contact regions in the CdTe crystal – Cu film system can be formed, depending on the laser energy density and beam defocusing. On the base of the ellipsometric studies, it was found that while irradiating the Cd1-xMnxTe crystal surface, the refractive index of the oxide film on the modified surface changes depending on the laser beam energy density, which can be interpreted as the formation of the oxides of the different chemical composition.
The paper shows the results of the development of a photodiode technology based on gallium phosphide structure n+-n-GaP-Au with high sensitivity. It provides the ion etching of the surface of the gallium phosphide before an application of a leading electrode of gold. The barrier layer of a 20 nm thick gold is applied to the substrate in the magnetic field of GaP. When forming the contact with the reverse side of the indium substrate at 600°C, there occurs the annealing of the gold barrier layer. At the maximum of the spectral characteristics obtained by the photodiode, it has a sensitivity of 0.13 A/W, and at a wavelength of 254 nm – about 0.06 A/W. The dynamic range of the photodiode is not less than 107.
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