Bacteria in the Desulfovibrionaceae family, which contribute to S element turnover as sulfate-reducing bacteria (SRB) and disproportionation of partially oxidized sulfoxy anions, have been extensively investigated since the importance of the sulfur cycle emerged. Novel species belonging to this taxon are frequently reported, because they exist in various environments and are easy to culture using established methods. Due to the rapid expansion of the taxon, correction and reclassification have been conducted. The development of high-throughput sequencing facilitated rapid expansion of genome sequence database. Genome-based criteria, based on these databases, proved to be potential classification standard by overcoming the limitations of 16S rRNA-based phylogeny. Although standards methods for taxogenomics are being established, the addition of a novel genus requires extensive calculations with taxa, including many species, such as Desulfovibrionaceae. Thus, the genome-based criteria for classification of Desulfovibrionaceae were established and validated in this study. The average amino-acid identity (AAI) cut-off value, 63.43 ± 0.01, was calculated to be an appropriate criterion for genus delineation of the family Desulfovibrionaceae. By applying the AAI cut-off value, 88 genomes of the Desulfovibrionaceae were divided into 27 genera, which follows the core gene phylogeny results. In this process, two novel genera (Alkalidesulfovibrio and Salidesulfovibrio) and one former invalid genus (“Psychrodesulfovibrio”) were officially proposed. Further, by applying the 95–96% average nucleotide identity (ANI) standard and the 70% digital DNA–DNA hybridization standard values for species delineation of strains that were classified as the same species, five strains have the potential to be newly classified. After verifying that the classification was appropriately performed through relative synonymous codon usage analysis, common characteristics were listed by group. In addition, by detecting metal resistance related genes via in silico analysis, it was confirmed that most strains display metal tolerance.
In this paper, one of goals is to elucidate Vt behaviors of a top gate LTPS-TFT fabricated on the PI substrate exposed to the negative bias temperature stress (NBTS), hot carrier injection (HCI) and breakdown voltage (BV). Physical and device characterization intend to comprehend the structural dependency of LTPS-TFT on Vt stability and reliability in comparison to the glass substrate. It is found that turn-over Vt behaviors of a top gate LTPS-TFT on the polyimide (PI) substrate depends on negative bias temperature stress (NBTS) conditions. Vt behaviors are attributed to LTPS-TFT structure dependent intrinsic negative charges at the interface between the barrier and PI substrate, causing the accumulation of positive charges at the poly-Si back channel. In fact, intrinsic process parameters, such as barrier thickness and PI cure conditions, play important roles to control interfacial charges at the interface. Finally, streamlined barrier process enables LTPS-TFT on PI substrate to expand advanced flexible applications without compromising luminescence and reliability. KeywordsVt turn over phenomenon; LTPS TFT; barrier process optimization; negative bias temperature stress; reliability P-137 / J. Kim SID 2017 DIGEST • 1775
HGTree is a database that provides horizontal gene transfer (HGT) event information on 2472 prokaryote genomes using the tree-reconciliation method. HGTree was constructed in 2015, and a large number of prokaryotic genomes have been additionally published since then. To cope with the rapid rise of prokaryotic genome data, we present HGTree v2.0 (http://hgtree2.snu.ac.kr), a newly updated version of our HGT database with much more extensive data, including a total of 20 536 completely sequenced non-redundant prokaryotic genomes, and more reliable HGT information results curated with various steps. As a result, HGTree v2.0 has a set of expanded data results of 6 361 199 putative horizontally transferred genes integrated with additional functional information such as the KEGG pathway, virulence factors and antimicrobial resistance. Furthermore, various visualization tools in the HGTree v2.0 database website provide intuitive biological insights, allowing the users to investigate their genomes of interest.
Indium‐Tin‐Oxide (ITO) / Ag (Silver) / ITO triple layer, are often used as anode electrodes, but when the Ag is eluted, they cause many problems, such as poor dark spots. In this paper, the thermal behavior of the upper ITO, which is presumed to be the most relevant, was observed to identify the cause of this defect. The ITO layer is deposited in an amorphous state during initial deposition to create a pattern. After patterning, it is crystallized by heat treatment to obtain electrical and physical characteristics. However, it was confirmed that partial crystallization was already in progress at initial deposition due to changes in thickness. Partial crystallization was mainly observed at the meeting points of the three Ag grains. It was also confirmed that the process of heat treatment led to different crystallization than the initial partial crystallization. The crystallization areas formed in these heterogeneous states showed different thermal behavior. Stress caused by different thermal behaviors accelerated as heat treatment progressed, producing pin‐holes after the heat treatment was completed. Thus, the number of pin‐holes increases as heterogeneous states increase, resulting in a difference in the level of Ag elution defect. In conclusion, a decrease in the number of triple points an Ag Grain meets can reduce dissimilarity and consequently reduce the probability of pin‐hole occurrence. Therefore, expanding the size of the Ag Grain is effective in reducing the defect of Ag elution.
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