The strain in an organic field-effect channel was controlled using a pressure-sensitive organic superconductor -͑BEDT-TTF͒ 2 Cu͓N͑CN͒ 2 ͔Br ͓BEDT-TTF= bis͑ethylenedithio͒tetrathia-fulvalene͔. The difference in thermal properties between the channel and the substrate induced strain with cooling, resulting in a phase transition. An unshrinkable SiO 2 / Si substrate was used to strain the subject material to the insulating state at low temperature, whereas a shrinkable polymer-based substrate allowed it to be a superconductor. The strain-induced insulating phase on SiO 2 / Si is at the vicinity of the phase boundary with the superconducting phase, actualizing field-effect transistor behavior.
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