The controlled creation, manipulation and detection of spin-polarized currents by purely electrical means remains a central challenge of spintronics. Efforts to meet this challenge by exploiting the coupling of the electron orbital motion to its spin, in particular Rashba spin-orbit coupling, have so far been unsuccessful. Recently, it has been shown theoretically that the confining potential of a small current-carrying wire with high intrinsic spin-orbit coupling leads to the accumulation of opposite spins at opposite edges of the wire, though not to a spin-polarized current. Here, we present experimental evidence that a quantum point contact -- a short wire -- made from a semiconductor with high intrinsic spin-orbit coupling can generate a completely spin-polarized current when its lateral confinement is made highly asymmetric. By avoiding the use of ferromagnetic contacts or external magnetic fields, such quantum point contacts may make feasible the development of a variety of semiconductor spintronic devices.
The mobility and the sheet electron density of two-dimensional electron gas in AlSb∕InAs quantum well structures optimized for device applications were measured in the temperature range 4.2K<T<90K. A maximum electron mobility μ=3.24×105 was found at 4.2K at a sheet electron density n2D=1.1×1012cm−2. Measurements of the integral quantum Hall and Shubnikov-de Haas oscillations in the temperature range 0.07–9K were also carried out to obtain additional information on the characteristics of the two-dimensional electron gas. The electron effective mass m* and the effective electron g-factor g* were determined from these measurements and found to be, respectively, 0.032m0 and 14.6. The latter is in good agreement with the recent experimental data obtained from cyclotron resonance and titled magnetic-field experiments.
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