Hybrid inorganic–polymer nanocomposites can be employed in diverse applications due to the potential combination of desired properties from both the organic and inorganic components. The use of novel bottom–up in situ synthesis methods for the fabrication of these nanocomposites is advantageous compared to top–down ex situ mixing methods, as it offers increased control over the structure and properties of the material. In this review, the focus will be on the application of the sol–gel process for the synthesis of inorganic oxide nanoparticles in epoxy and polysiloxane matrices. The effect of the synthesis conditions and the reactants used on the inorganic structures formed, the interactions between the polymer chains and the inorganic nanoparticles, and the resulting properties of the nanocomposites are appraised from several studies over the last two decades. Lastly, alternative in situ techniques and the applications of various polymer–inorganic oxide nanocomposites are briefly discussed.

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CO 2 laser processing offers the possibility to inscribe structures within glass-clad SiGe-core fibers by altering the spatial distribution of the Si and Ge. Spatial segregation of Ge to the end of a fiber is shown via optical transmission measurements used to alter the local bandgap, and the curved end of the fiber focuses the output of a multimode fiber. Scalable fabrication is demonstrated using a commercial CO 2 laser engraver for processing of arrays.

CO 2 laser annealing of SiGe core, glass-clad optical fibers is a powerful technique for the production of single-crystal cores with spatially varying Ge concentrations. Laser power, laser scan speed and cooling air flow alter the Ge distribution during annealing. In this work, near-single crystal fibers exhibiting a central axial feature with peak Ge concentration ∼15 at% higher than the exterior of the semiconductor core have been prepared. Preferential transmission of near infrared radiation through the Ge-rich region, and spectral data confirm its role as a waveguide within the semiconductor core. This proof-of-concept step toward crystalline double-clad structures is an important advancement in semiconductor core optical fibers made using the scalable molten core method.

Si quantum dots (Si q-dots) with a size below *5 nm have great potential in electronics and photovoltaics and are candidate materials for down conversion of light due to their strong photoluminescence (PL) properties. Proper control of size and size distribution as well as the surface characteristics of the Si q-dots are critical for applications in order to control the PL response. Here we report on the synthesis of Si q-dots by a chemical route using potassium-naphthalide as a reducing agent. A narrow size distribution of the Si q-dots, with size in the range from 3 to 30 nm, was achieved by controlling the concentration of the reduction agent, the concentration of silicon tetrachloride (SiCl 4 ) precursor, temperature and the reaction time. The crystallinity and the narrow size distribution of Si q-dots were demonstrated by electron microscopy and electron diffraction. The optical absorption and PL response in the blue region of the visible spectrum is reported for 3.1 ± 0.6 nm octanoxy capped Si q-dots and 4.2 ± 1.4 nm methoxy capped Si q-dots in 1,2-dimethoxyethane solution. A quantum efficiency of (1.63 ± 0.16) 9 10 -3 % was detected for the octanoxy terminated Si q-dots.