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A novel technique to lithograph the MoS2 surface is described here. Mechanically exfoliated MoS2 flakes have been patterned with an atomic force microscope tip. After the patterning process, the lithographed areas have been removed by selective chemical etching. The electronic properties of the MoS2 flakes have been analyzed with spatially resolved photoelectron spectroscopy, with tunable incident photon energy, provided by a synchrotron light source. Tens of meV core level shifts can be recorded in relation to the flakes edges, coming from both the exfoliation and from the lithography.

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In the research, we show that suboxidic Ti7O13 and rutile TiO2 phases formed in addition to the general Ti3O5 phase when the sintering temperature was set at constant argon gas flow rate. Suboxidic Ti7O13 and rutile TiO2 phases were removed by tuning the flow rate of argon gas at constant sintering temperature. At the 1300°C temperature, the smallest Ti3O5 nanocrystals with a size of ~9 nm were produced. Flat shaped particles of Ti3O5 crystals were observed in SEM measurements.

The surface structure of the WSe2 were studied using scanning tunneling microscopy. Exfoliation method in an ultra-high-vacuum chamber method is used to obtain a clean surface of WSe2 samples with atomically smooth terraces and multi-layer steps. Atomic-resolution images revealed two types of atomic defects of surface or near surface. These defects have been identified as the defects in the tungsten atom layer just below the topmost selenium layer.