Few layered MoS<sub>2</sub>lithography with an AFM tip: description of the technique and nanospectroscopy investigations

Donarelli, M.; Perrozzi, Francesco; Bisti, F.; Paparella, Francesco; Feyer, Vitaliy; Ponzoni, Andrea; Gonchigsuren, Munkhsaikhan; Ottaviano, L.

doi:10.1039/c5nr02337h

Cited by 23 publications

(19 citation statements)

References 31 publications

(51 reference statements)

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“…Surface roughness of less than 0.5 nm in the height profile indicates that the thinning approach of using argon plasma does not destroy its crystallinity and that few of PtTe 2 traces are left in the surface. We note that similar approach has been applied for bulk samples with weak interlayer interaction to obtain thin flakes, such as MoS 2 layer thinning with a local anodic oxidation method . Different from prior works, we modified IBE instrument to speed up argon plasma and successfully thinned as‐grown PtTe 2 with strong interlayer interaction down to atomically thin crystals.…”

Section: Resultsmentioning

confidence: 99%

Low‐Temperature Eutectic Synthesis of PtTe₂ with Weak Antilocalization and Controlled Layer Thinning

Hao

Zeng

et al. 2018

Adv Funct Materials

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Metallic transition metal dichalcogenides (TMDs) have exhibited various exotic physical properties and hold the promise of novel optoelectronic and topological devices applications. However, the synthesis of metallic TMDs is based on gas-phase methods and requires high-temperature condition. As an alternative to the gas-phase synthetic approach, lower temperature eutectic liquid-phase synthesis presents a very promising approach with the potential for larger-scale and controllable growth of high-quality thin metallic TMD single crystals. Here, the first realization of low-temperature eutectic liquid-phase synthesis of type-II Dirac semimetal PtTe 2 single crystals with thickness ranging from 2 to 200 nm is presented. The electrical measurement of synthesized PtTe 2 reveals a record-high conductivity of as high as 3.3 × 10 6 S m −1 at room temperature. Besides, the weak antilocalization behavior is identified experimentally in the type-II Dirac semimetal PtTe 2 for the first time. Furthermore, a simple and general strategy is developed to obtain atomically thin PtTe 2 crystal by thinning as-synthesized bulk samples, which can still retain highly crystalline and exhibits excellent electrical conductivity. The results of controllable and scalable low-temperature eutectic liquid-phase synthesis and layer-by-layer thinning of high-quality thin PtTe 2 single crystals offer a simple and general approach for obtaining different thickness metallic TMDs with high meltingpoint transition metal.

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Section: Resultsmentioning

confidence: 99%

Low‐Temperature Eutectic Synthesis of PtTe₂ with Weak Antilocalization and Controlled Layer Thinning

Hao

Zeng

et al. 2018

Adv Funct Materials

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“…Of note is that interior oxidation is completely lacking; this absence of oxidation can be explained by reduced interior defects due to graphene (Figure f). The charges or dipoles in the Si substrate generate electric fields on the SiO 2 surface, which reinforce the adsorbate–TMD interaction by inducing an electronic charge transfer, affecting the rate of WS 2 oxidation . However, the oxidation of WS 2 on a graphene/SiO 2 substrate is significantly suppressed, since the transferred graphene covering the SiO 2 screens the surface electric field.…”

mentioning

confidence: 99%

Graphene‐Assisted Antioxidation of Tungsten Disulfide Monolayers: Substrate and Electric‐Field Effect

et al. 2017

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Transition metal dichalcogenides (TMDs) have emerged as promising materials to complement graphene for advanced optoelectronics. However, irreversible degradation of chemical vapor deposition-grown monolayer TMDs via oxidation under ambient conditions limits applications of TMD-based devices. Here, the growth of oxidation-resistant tungsten disulfide (WS ) monolayers on graphene is demonstrated, and the mechanism of oxidation of WS on SiO , graphene/SiO , and on graphene suspended in air is elucidated. While WS on a SiO substrate begins oxidation within weeks, epitaxially grown WS on suspended graphene does not show any sign of oxidation, attributed to the screening effect of surface electric field caused by the substrate. The control of a local oxidation of WS on a SiO substrate by a local electric field created using an atomic force microscope tip is also demonstrated.

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“…This kind of feature reminds of the oxide growth on silicon and on certain polymers caused by a nano-explosion followed by a shockwave (Figure 7) [30]. It is worthy to mention that by means of applying a voltage with an AFM tip on the semiconducting TMDCs MoS2 [31] and WSe2 [32], different types of structures have been achieved, that also resemble the patterns presented in this work. However in both cases, authors highlight the non-oxide nature of the motifs, against the results observed by us that prove the oxide nature of the obtained patterns on above mentioned metallic TMDCs (i.e.…”

Section: Lon On Other Tmdcsmentioning

confidence: 79%

Local Oxidation Nanolithography on Metallic Transition Metal Dichalcogenides Surfaces

et al. 2016

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Abstract:The integration of atomically-thin layers of two dimensional (2D) materials in nanodevices demands for precise techniques at the nanoscale permitting their local modification, structuration or resettlement. Here, we present the use of Local Oxidation Nanolithography (LON) performed with an Atomic Force Microscope (AFM) for the patterning of nanometric motifs on different metallic Transition Metal Dichalcogenides (TMDCs). We show the results of a systematic study of the parameters that affect the LON process as well as the use of two different modes of lithographic operation: dynamic and static. The application of this kind of lithography in different types of TMDCs demonstrates the versatility of the LON for the creation of accurate and reproducible nanopatterns in exfoliated 2D-crystals and reveals the influence of the chemical composition and crystalline structure of the systems on the morphology of the resultant oxide motifs.

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Few layered MoS₂lithography with an AFM tip: description of the technique and nanospectroscopy investigations

Cited by 23 publications

References 31 publications

Low‐Temperature Eutectic Synthesis of PtTe₂ with Weak Antilocalization and Controlled Layer Thinning

Low‐Temperature Eutectic Synthesis of PtTe₂ with Weak Antilocalization and Controlled Layer Thinning

Graphene‐Assisted Antioxidation of Tungsten Disulfide Monolayers: Substrate and Electric‐Field Effect

Local Oxidation Nanolithography on Metallic Transition Metal Dichalcogenides Surfaces

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Few layered MoS2lithography with an AFM tip: description of the technique and nanospectroscopy investigations

Cited by 23 publications

References 31 publications

Low‐Temperature Eutectic Synthesis of PtTe2 with Weak Antilocalization and Controlled Layer Thinning

Low‐Temperature Eutectic Synthesis of PtTe2 with Weak Antilocalization and Controlled Layer Thinning

Graphene‐Assisted Antioxidation of Tungsten Disulfide Monolayers: Substrate and Electric‐Field Effect

Local Oxidation Nanolithography on Metallic Transition Metal Dichalcogenides Surfaces

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Few layered MoS₂lithography with an AFM tip: description of the technique and nanospectroscopy investigations

Low‐Temperature Eutectic Synthesis of PtTe₂ with Weak Antilocalization and Controlled Layer Thinning

Low‐Temperature Eutectic Synthesis of PtTe₂ with Weak Antilocalization and Controlled Layer Thinning