The applications of MEMS, micromachines or micro robots, to industrial inspections are investigated. Applications are classified by their uses and forms. The necessity of MEMS is also described. Present research activities regarding maintenance area are surveyed, and a chain-type micromachine for the inspection of outer tube surfaces is introduced as an example. There are still a lot of problems for practical use, however, although there are lots of potential uses. Industrial inspection applications are expected to be one of the promising applications of MEMS followed by optical. RF, and power applications. *

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Although high-temperature superconductors (HTS) are very promising for high-field generation over 25 T, it is difficult to apply them to an NMR magnet because of their low index values and the difficulty caused by superconducting joints. The properties of HTS appear to cause poor magnetic field stability in the persistent-mode operation. Therefore, in this study, a high-field NMR magnet including HTS coils will be operated in the driven-mode. In order to evaluate the magnetic field stability in the driven-mode, we modified a 14 Tesla (600 MHz) vertical NMR magnet. With regard to the magnet, persistent switches for axial shim coils (z 0 z 1 z 2 ) as well as the main coil were removed for constant operation with a power supply. In addition, a 1 W Gifford-McMahon (GM) cryocooler at 4 K and HTS current leads were installed in the cryostat to re-condense boiled helium gas. As a result, there was a long-term change of about 6 ppm in the magnetic field stability, but, in the short-term (a few hours), a change of about 2 ppm was observed. By the z 0 shim control, in combination with the NMR field measurement, an averaged magnetic field drift of less than 0.0001 ppm/h was achieved.

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We have developed an uncooled IRFPA with a chip scale vacuum package and succeeded in obtaining excellent IR images of less than 60 mK in NETD. This package consists of a device chip and a silicon lid. The chip in this study is a 160 x 120 SOI diode IRFPA with a 25 µm pixel pitch. The size of the package is 14.5(L) x 13.5(W) x 1.2(H) mm. The gap between the device chip and the lid is controlled by the thickness of the vacuum sealing material. The lid is prepared by a wafer process and diced just before vacuum sealing. We use DLC (diamond like carbon) as the AR coat because of its high IR transmittance and high endurance in the wafer process. DLC films are deposited on both sides of the silicon lid wafer, and then a ring-shaped metal pattern for solder bonding is formed on one side of the lid wafer. Solder is mounted on the metal pattern by a molten solder ejection method. The patterned thin-film getter is formed on the lid wafer. Because of the use of patterned thin-film getter, there is no need to form a cavity on the lid to allow installation of getter or to insert a spacer between the device chip and the lid. Then the lid wafer is diced into individual lids. The device wafer and the lids are set in a vacuum chamber, which has a heater to melt the solder, so as to pair each die and lid. After pumping the chamber, the patterned thin-film getters are activated and then the lids are bonded simultaneously to the device wafer. Finally the device wafer is diced into individual chips. The measured pressure of the package is less than 0.5 Pa which is sufficient for obtaining high thermal isolation. In this technique, only the good dies in a wafer are packaged in chip scale simultaneously. Thus, a reduction in the size and cost of the package has been achieved.