Ab.vtracf-Charge injection in MOS switches has been analyzed. The anatysis has been extended to the generrd case including signal-source resistance and capacitance. Universal plots of percentage channel charge injected are presented. Normalized variables are used to facilitate usage of the plots. The effects of gate voltage falting rate, sigual-source Icvel, substrate doping, substrate hias, switch dimensions, as well as the source and holding capacitances are all included in the plots. A small-geometry switch, slow switching rate, and small source resistance can reduce the charge injection effect. On-chip test circuitry with a unity-gain operational amplifier, which reduces the disturbance imposed by measurement equipment to a minimum, is found to be an excellent monitor of the switch charge injection. The theoretical results agree with the experimental data.

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Abstract-In this letter, we analyze the suitability of the double gate MOSFETs (DG MOSFETs) for RF-mixer applications from the point of optimizing the transconductance gain, power consumption, and area. Mixer topologies using the 0.13-m conventional MOSFETs, simultaneously driven DG MOSFETs (SDDG) and the independently driven DG MOSFETs (IDDG) are compared using extensive device simulations. In the frequency range 1-40 GHz, our simulation results show that the mixer circuits realized using the SDDG technologies show an order of magnitude lower power-area product, for a given transconductance gain, compared to the conventional and the IDDG technologies.

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