For reducing the consequences of global warming and fuel scarcity, we need to change dilemma in terms of cooking. For resolving this issue, the solar cooking offers the best alternative. There are various designs of solar cookers. Different types of solar cookers are presented by a number of researchers over the decade that includes the box type solar cookers and parabolic type solar cookers. However, these types of solar cookers have limited performance in terms of tracking and operating during night time. An evacuated tube solar geyser is converted into a solar cooker which is obsolete from tracking and cooking can also carried out during night time having a thermal storage unit (TSU). The performance of the system is observed during clear days and nights of August and September 2019 in Peshawar, Pakistan. The maximum temperature attained by the system is recorded 98.5 o C. From the observed experimented data, the results indicate that the system is faithfully performing under the required climate conditions.
The virtual simulation of organic solar cell is carried in General purpose Photovoltaic Device Model (GPVDM) software. In this work performance of Organic solar cell is investigated. Organic solar cell is composed of 3-hexyl thiophene (P3HT:PCBM) a polymer as an active layer. The poly (3, 4-ethylenedioxy thiophene) poly (styrenesulfonate) (PEDOT:PSS) is added as an electron blocking layer and Indium Tin Oxide (ITO) film is used as top layer because of its high conductivity and very low resistance to transmission of light in visible range. GPVDM is used for light harvesting device simulations. It works on basis of Poisson's Equations to equate the device internal parameters that may be electrical or optical. Shockley-Read-Hall (SRH) formulations are used to calculate recombination and carrier trapping or mobility. In this study the temperature, band gap and active layer thickness is studied, how they affect the performance of organic solar cell. Variation in temperature inversely affects the efficiency. With increase in Band Gap efficiency also increase till band gap reaches 1.6eV, moreover increase in band gap increases efficiency but open circuit voltage value gets negative. The optimum value of active layer we got is 20nm which gives high efficiency.
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