Articles you may be interested inA prototype silicon double quantum dot with dispersive microwave readout A numerical simulation study of gallium-phosphide/silicon heterojunction passivated emitter and rear solar cells J. Appl. Phys. 115, 044508 (2014); 10.1063/1.4863464 Photon-assisted-tunneling in a coupled double quantum dot under high microwave excitation powers
In this research, we modeled a silicon-based photodetector for the NIR-IR spectrum using a grating structure fabricated using the metal-assisted chemical etching method. A nanostructure fabricated by using this method is free of defects such as unwanted sidewall metal depositions. The device is simulated using Lumerical finite difference time domain (FDTD) for optical characteristics and Lumerical CHARGE for electrical characteristics. First, we optimized the grating structure duty cycle parameter for maximum optical power absorption using the particle swarm optimization algorithm provided in Lumerical FDTD, and then used the optimized parameter for our simulations. From Lumerical FDTD simulations, we found that the Cr masker metal used in the fabrication process acts as a resonant cavity and a potential candidate for internal photo emission (IPE) effects. By using Lumerical CHARGE, we performed electrical simulation and by adding the IPE calculation we found that at 850 nm wavelength the Si grating photodetector device exhibited 19 mA/W responsivity and detectivity of 2.62 × 106 Jones for −1 volt operating voltage.
In this research, thick film technology has been used to design and fabricate relative humidity sensors with Polyvinyl Alcohol (PVA) as the sensing layer. The design was optimized to produce an ideal geometry according to the limitations of thick film technology. The sensor fabrication process used screen printing techniques on Alumina (Al2O3) substrate with Silver (Ag) as the electrode material. SnO2 was added to the PVA sensing layer with variations in the composition of 1:1 and 1:2. FTIR analysis showed that the addition of SnO2 did not affect the structure of the PVA, which indicated that there was no chemical reaction between PVA and SnO2. The deposition of the sensing layer was carried out using spin coating method, and the fabricated sensors were then tested by varying 5 humidity points inside a chamber with a hygrometer as a reference. Based on the test results, it was found that the sensors showed responses to humidity variation in the form of changes in resistance values. When the humidity in the chamber increased, the sensor resistance value decreased. The addition of SnO2 could reduce the relatively high resistance value of the PVA-based humidity sensor and also increase the sensor's time response to humidity variation. However, the humidity sensor's sensitivity decreased for the higher composition of SnO2. With this technique, a simple yet stable humidity sensor could be fabricated using thick-film technology with a wide range of potential applications.
Abstract. This paper present the result of simulation coupled series triple quantum dot (CSTQD) compared with an experiment that had been done recently. This Simulation shows the part of stability diagram of CSTQD as shown as in the experiment. The stability diagram from the simulation is almost given the similar result to the experiment. The target of the simulation and experiment are investigating the impact of coupling capacitor to the stability diagram. The experiment used various parameters of capacitor, and the simulation used the value of capacitor as the result of experiment. This simulation use SIMON (Single Electron Simulation), it's also shown the characteristics of coupled series triple quantum dot by giving various value of capacitor, resistance and potential difference at each gate and each drain.
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