Comparison result between simulation and experiment of coupled series triple quantum dots and its characteristics with SIMON 2.0

Here we present an original CMOS compatible fabrication method of a single-electron transistor structure with extremely small islands, formed by solitary phosphorus dopants in the silicon nanobridge. Its key feature is the controllable size reduction of the nanobridge in sequential cycles of low energy isotropic reactive ion etching that results in a decreased number of active charge centers (dopants) in the nanobridge from hundreds to a single one. Electron transport through the individual phosphorous dopants in the silicon lattice was studied. The final transistor structure demonstrates a Coulomb blockade voltage of ∼30 mV and nanobridge size estimated as [Formula: see text]. Analysis of current stability diagrams shows that electron transport in samples after the final etching stage had a single-electron nature and was carried through three phosphorus atoms. The fabrication method of the demonstrated structure allows it to be modified further by various impurities in additional etching and implantation cycles.

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“…The similar triple splitting was also theoretically investigated [35,36] and observed experimentally [16].…”

Section: Discussionsupporting

confidence: 71%

“…A very similar behavior of the Si transistor was reported by Tan et al [16]. The effect of current triangles splitting on CSDs in a system with two and three charge centers connected in parallel to transport electrodes was studied in [35] and [36].…”

Section: Discussionsupporting

confidence: 68%

Sequential reduction of the silicon single-electron transistor structure to atomic scale

et al. 2017

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“…Vg value is changed to get results of the stability diagram from the device. S. Ramadhanet al [13] simulates this experiment using SIMON 2.0.…”

Section: Introduction (Heading 1)mentioning

confidence: 99%

Analysis of Triple Quantum Dots Single Electron Transistor (TQD-SET) for Various Configuration

Hanurjaya¹,

Anwar

Sulistyo³

et al. 2020

JEEICT

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<p class="Abstract">Single electron transistor (SET) has high potential for the development of quantum computing technologies in order to provide low power consumption electronics. For that purpose, many studies have been conducted to develop SET using dopants as quantum dots (QD). The working principle of SET basically is a single electron tunneling one by one through tunnel junction based on the coulomb blockade effect. This research will simulate various configurations of triple quantum dots single electron transistors (TQD-SET) using SIMON 2.0 with an experimental approach of MOSFET with dopants QD. The configurations used are series, parallel, and triangle configuration. The mutual capacitance (Cm), tunnel junctions (TJ), and temperature values of TQD-SET configurations are varied. The I-V characteristics are observed and analyzed for typical source-drain voltage (Vsd). it is found that the TQD series requires larger Vsd than parallel or triangular TQDs. On the other hands, the current in parallel TQD tends to be stable even though Cm is changed, and the current in the TQD triangle is strongly influenced by the Cm. By comparing these three configurations, it is observed that the tunnelling rate is higher for parallel TQD due to higher probability current moves through three dots by applying Vds.</p>

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FPGA based hardware implementation of fault detection for microgrid applications

Ramadhan

Hariadi

Ahmad

2017

2017 International Symposium on Electronics and Smart Devices (ISESD)

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Comparison result between simulation and experiment of coupled series triple quantum dots and its characteristics with SIMON 2.0

Cited by 4 publications

References 6 publications

Sequential reduction of the silicon single-electron transistor structure to atomic scale

Sequential reduction of the silicon single-electron transistor structure to atomic scale

Analysis of Triple Quantum Dots Single Electron Transistor (TQD-SET) for Various Configuration

FPGA based hardware implementation of fault detection for microgrid applications

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