Absrract: A high-performance power technology has been developed in which conventional SO1 lateral power device is merged with novel thick film technology in backside of its substrate, such as Silicon 00 Double Insulator (SODI) structure. In addition to realize a high breakdown voltage performance with the assumption of 1.2kV class application, SODI structure has mainly two advantages.One is a low cost-performance of the initial SO1 substrate can be done, because a design of initial buried oxidation layer thickness is free. Another one is a huge reduction in beat resistance of the power device can be done, because a back metal electrode is formed just ooder the device.
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