Secondary ion mass spectrom6try has been applied for measuring the tracer diffusivity of oxygen in the c direction of singlecrystal rutile for a temperature range of 1150 to 1450 K at 6000 Pa pressure of oxygen gas. Specimens diffusion-annealed in oxygen gas containing l H 0 were subsequently continuously sputtered and analyzed for ' ' 0 and "0. The tracer diffusivity was determined from the depth profile of lH0, taking into account a surface exchange reaction of oxygen. The tracer diffusivity in CrpOs-doped rutile was 3 to 8 times larger than that in pure rutile. For pure rutile, the diffusivity is expressed by D(m2/ s ) = 3 . 4 x lo-' exp[ -25l(kJ/mol)/RT], and for 0.08 mol% Cr,O,,-doped rutile, by D(m2/s)=2.0x lo-' exp[ -204(kJ/ mol)/RT]. The Cr,O, doping had a catalytic effect on the rate constant of the surface exchange reaction on the c surface. The rate constant is represented, for pure rutile, by k(m/ s ) = 2 . 4~ lo-' exp[ -246(kJ/mol)/RT], and for 0.08 mol% Cr,O,,-doped rutile, k ( d s ) = 3 . 5~ exp[ -13l(kJ/mol)/RT].
An aerial image mask inspection system for extreme ultraviolet lithography (EUVL) is developed. This system consists of microscopes using the same wavelength of light as is used for the exposure and produces a magnified image of defects on a mask. Using this microscope, amplitude defects on finished masks and phase defects on glass substrates are observed. A phase defect was formed by a multilayer coated on a line pattern with 5 nm high and 90 nm wide on a glass substrate. Although the defect detected is made beforehand, it is detected by reflection of the light which penetrated the multilayer. These results show that it is possible to detect the internal reflectivity distribution without depending on surface perturbations. We tried to observe “pit defects”, but it was not possible to observe these at this time. The pit defects, such as scratches on glass substrates may not become defects depending on the process of formation of the multilayer.
A defect inspection technique on an extreme ultraviolet lithography mask is described. There are two kinds of defects, amplitude defects and phase defects due to the multilayer coating. The technique utilizes a microscope using the same 13.5 nm wavelength as the light used for exposure, and producing a magnified image of defects on a mask. Using this microscope, amplitude defects on practical masks and phase defects are observed. A phase defect was formed by a multilayer coated on a line pattern with a height of 5 nm and width of 90 nm on a glass substrate. Although the detected defect is made beforehand, it is detected by reflection of the light which penetrated inside of a multilayer. These results show that it is possible to detect the internal reflectivity distribution, without depending on surface perturbations.
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