An aerial image mask inspection system for extreme ultraviolet lithography (EUVL) is developed. This system consists of microscopes using the same wavelength of light as is used for the exposure and produces a magnified image of defects on a mask. Using this microscope, amplitude defects on finished masks and phase defects on glass substrates are observed. A phase defect was formed by a multilayer coated on a line pattern with 5 nm high and 90 nm wide on a glass substrate. Although the defect detected is made beforehand, it is detected by reflection of the light which penetrated the multilayer. These results show that it is possible to detect the internal reflectivity distribution without depending on surface perturbations. We tried to observe “pit defects”, but it was not possible to observe these at this time. The pit defects, such as scratches on glass substrates may not become defects depending on the process of formation of the multilayer.
The purpose of this study was to examine the psychometric properties of the Adolescent Dissociative Experiences Scale (A-DES) applied to Japanese adolescents in school. A large sample of normal adolescents (N = 2,272) aged 11 to 18 years completed the A-DES, and the factor structure, frequency, and differences by gender and age were examined. The scores of Japanese adolescents were comparable to the results of similarly aged adolescents in the United States, England, and Turkey but much higher than those recorded in The Netherlands, Finland, and Sweden. In particular, adolescents aged 11 to 12 seemed to have more dissociative experiences than older adolescents. Out of 1-, 2-, 3-, and 4-factor structures that exploratory factor analyses regarded as competing models, confirmatory factor analyses seemed to support a 3-factor structure: depersonalization, disintegration of conscious control, and amnesia. The future implications of these results for clinicians and professionals who assess dissociative tendency in adolescents are described.
We constructed an extreme ultraviolet microscopy (EUVM) system for actinic mask inspection that consists of Schwarzschild optics and an X-ray zooming tube. This system was used to inspect completed extreme ultraviolet lithography (EUVL) masks and Mo/Si coated substrates on ultralow expansion (ULE) glass. We also have fabricated programmed phase defects on the blanks used for inspection. The EUVM system was capable of resolving a programmed line-pit defect with a width of 40 nm and a depth of 10 nm and also that with a width of 70 nm and a depth of 2 nm. However, a 75-nm-wide, 1.5-nm-deep pit defect was not resolved. The EUVM system was also capable of resolving programmed hole-pit defects with widths ranging from 35 to 170 nm and depths ranging from 2.2 to 2.5 nm. However, 20-nmwide, 1.5-nm-deep hole-pit defects were not resolved. These results agree with the simulation results perfectly. Thus, in this study, critical dimensions of a pit defects on mask blanks were determined to be a width of 20 nm and a depth of 2 nm.
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